Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD4606Z
Preliminary
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
„
The UTC UD4606Z is a dual enhancement mode Power
MOSFET using UTC perfect trench technology to provide customers
with advanced RDS(ON) and low gate charge. This device has ESD
protection function.
These complementary MOSFETs can be used to form a level
shifted high side switch and for other applications.
FEATURES
„
* N-Channel: 30V/6.9A
RDS(ON)=22.5mΩ (TYP.) (VGS=10V)
RDS(ON)=34.5mΩ ((TYP.) (VGS=4.5V)
*P-Channel: -30V/-6A
RDS(ON)=28mΩ(TYP.) (VGS=-10V )
RDS(ON)=44mΩ(TYP.) (VGS=-4.5V)
* Reliable and rugged
* ESD protection
SYMBOL
„
(5)(6)
D2
(7)(8)
D1
(4)
G2
(2)
G1
S1
N-Channel (1)
„
S2
P-Channel (3)
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
UD4606ZL-S08-R
UD4606ZG-S08-R
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
SOP-8
Pin Assignment
Packing
1 2 3 4 5 6 7 8
S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
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UD4606Z
„
Preliminary
Power MOSFET
PIN CONFIGURATION
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UD4606Z
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current2
Pulsed Drain Current2
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID
IDM
PD
TJ
TSTG
RATINGS
30
±20
6.9
30
2
+150
-55 ~ +150
UNIT
V
V
A
A
W
°C
°C
P-CHANNEL
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
-30
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current2
ID
-6
A
Pulsed Drain Current2
IDM
-30
A
Total Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in2 pad area, t≤10sec.
„
THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient (Note)
RθJA
Note: Surface Mounted on 1in2 pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PATINGS
110
UNIT
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance2
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=24V,VGS=0V
VDS=0V ,VGS=±20V
30
VGS(TH)
VDS=VGS, ID=250µA
VGS=10V,ID=6.9A
VGS=4.5V, ID=5A
1
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=15V,VGS=0V,f =1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge2
QG
VDS=15V, VGS=10V, ID=6.9A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time2
tD(ON)
Turn-ON Rise Time
tR
VDS=15V, VGS=10V, RG=3Ω,
RL=2.2Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current3
IS
2
Drain-Source Diode Forward Voltage
VSD
IS =6.9A, VGS=0V
TYP
1.9
22.5
34.5
MAX UNIT
1
±5
V
µA
µA
3
28
42
V
mΩ
mΩ
680
102
77
pF
pF
pF
13.8
1.82
3.2
4.6
4.1
20.6
5.2
nC
nC
nC
ns
ns
ns
ns
0.76
3
1
A
V
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance2
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge2
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time2
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
SYMBOL
MIN
BVDSS
IDSS
IGSS
VGS=0V, ID=-250µA
VDS=-24V,VGS=0V
VDS=0V ,VGS=±20V
-30
VGS(TH)
VDS=VGS, ID=-250µA
VGS=-10V,ID=-6A
VGS=-4.5V, ID=-5A
-1.2
RDS(ON)
CISS
COSS
CRSS
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VDS=-15V,VGS=0V,f =1MHz
VDS=-15V,VGS=-10V,ID=-6A
VDS=-15V,VGS=-10V,RG=3Ω,
RL=2.7Ω
TYP
-2
28
44
MAX UNIT
-1
±5
V
µA
μA
-2.4
35
58
V
mΩ
mΩ
920
190
122
pF
pF
pF
18.5
2.7
4.5
7.7
5.7
20.2
9.5
nC
nC
nC
ns
ns
ns
ns
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current3
IS
2
Drain-Source Diode Forward Voltage
VSD
IS =-6A, VGS=0V
Notes:
1. Pulse width limited by TJ(MAX).
2. Pulse width ≤300μs, duty cycle ≤2%.
3. Surface Mounted on 1in2 pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
-0.76
MAX UNIT
-4.2
-1
A
V
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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