Analog Power AM90N08-04B N-Channel 80-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 80 PRODUCT SUMMARY rDS(on) (mΩ) 4.5 @ VGS = 10V 6 @ VGS = 4.5V ID(A) 90a Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 TC=25°C ID 90 Continuous Drain Current a IDM Pulsed Drain Current b 390 IS 110 Continuous Source Current (Diode Conduction) a a T =25°C P 300 Power Dissipation C D TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 62.5 RθJC 1 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM90N08-04B_1A Analog Power AM90N08-04B Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 64 V, VGS = 0 V VDS = 64 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 45 A VGS = 4.5 V, ID = 44 A VDS = 15 V, ID = 20 A IS = 55 A, VGS = 0 V Dynamic VDS = 40 V, VGS = 4.5 V, ID = 20 A VDS = 40 V, RL = 2 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz Min Typ Max 1 ±100 1 25 120 Unit V nA uA A 4.5 6 30 0.84 113 24 67 42 90 325 117 9924 959 852 mΩ S V nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM90N08-04B_1A Analog Power AM90N08-04B Typical Electrical Characteristics 0.02 100 80 0.015 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 4V 0.01 4.5V 0.005 60 40 20 6V,8V,10V 0 0 0 20 40 60 80 0 100 ID-Drain Current (A) 2 3 4 5 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 0.03 100 TJ = 25°C ID = 20A 0.025 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 1 0.02 0.015 0.01 10 1 0.1 0.005 0 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 100 25000 F = 1MHz 10V,8V,6V 20000 Capacitance (pf) 80 ID - Drain Current (A) 1.2 60 4.5V 40 4V 20 15000 Ciss 10000 5000 0 Coss Crss 0 0 0.2 0.4 0.6 0.8 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM90N08-04B_1A Analog Power AM90N08-04B Typical Electrical Characteristics 2 VDS = 40V ID = 20A 9 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 7 6 5 4 3 2 1.5 1 1 0 0.5 0 50 100 150 200 250 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 900 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit Limited by RDS 800 700 600 500 400 300 200 100 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 62.5 °C /W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM90N08-04B_1A Analog Power AM90N08-04B Package Information © Preliminary 5 Publication Order Number: DS_AM90N08-04B_1A