datasheet

SKKH 323/12 E
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
A
Chip
Tc = 85 °C
320
Tc = 100 °C
241
A
Tj = 25 °C
9500
A
Tj = 130 °C
8200
A
Tj = 25 °C
451250
A²s
Tj = 130 °C
336200
A²s
VRSM
1300
V
VRRM
1200
V
IT(AV)
ITSM
i2t
SEMIPACK® 3
Thyristor / Diode Modules
SKKH 323/12 E
sinus 180°
10 ms
10 ms
VDRM
(di/dt)cr
Tj = 130 °C
(dv/dt)cr
Tj = 130 °C
Tj
Visol
• Industrial standard package
• Electrically insulated base plate
• Heat transfer through aluminum oxide
ceramic insulated metal base plate
• Chip soldered on direct copper bonded
Al2O3 ceramic
• Thyristor with center gate
• UL recognition applied for file no.
E63532
Typical Applications*
• DC motor control (e. g. for machine
tools)
• Temperature control (e. g. for ovens,
chemical processes)
• Professional light dimming (studios,
theaters)
V
130
A/µs
1000
V/µs
-40 ... 130
°C
Module
Tstg
Features
1200
a.c.; 50 Hz; r.m.s.
-40 ... 125
°C
1 min
3000
V
1s
3600
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Chip
VT
Tj = 25 °C, IT = 750 A
1.45
V
VT(TO)
Tj = 130 °C
0.81
V
rT
Tj = 130 °C
0.85
mΩ
IDD;IRD
Tj = 130 °C, VDD = VDRM; VRD = VRRM
100
mA
tgd
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
1
µs
tgr
VD = 0.67 * VDRM
2
µs
tq
Tj = 130 °C
150
IH
Tj = 25 °C
150
500
mA
IL
Tj = 25 °C, RG = 33 Ω
300
2000
mA
VGT
Tj = 25 °C, d.c.
2
V
IGT
Tj = 25 °C, d.c.
150
mA
VGD
Tj = 130 °C, d.c.
IGD
Tj = 130 °C, d.c.
Rth(j-c)
Rth(j-c)
Rth(j-c)
cont.
sin. 180°
rec. 120°
µs
0.25
V
10
mA
per chip
0.091
K/W
per module
0.0455
K/W
per chip
0.095
K/W
per module
0.048
K/W
per chip
0.11
K/W
per module
0.055
K/W
Module
Rth(c-s)
chip
0.08
K/W
module
0.04
K/W
Ms
to heatsink M5
4.25
5.75
Mt
to terminals M8
7.65
10.34
Nm
5 * 9,81
m/s²
a
w
410
Nm
g
SKKH
© by SEMIKRON
Rev. 4 – 11.11.2013
1
SKKH 323/12 E
Fig. 1L: Power dissipation per thyristor/diode vs. on-state
current
Fig. 1R: Power dissipation per thyristor/diode vs.
ambient temperature
Fig. 2L: Power dissipation of one module vs. rms current
Fig. 2R: Power dissipation of one module vs. case
temperature
Fig. 3L: Power dissipation of two modules vs. direct
current
Fig. 3R: Power dissipation of two modules vs. case
temperature
2
Rev. 4 – 11.11.2013
© by SEMIKRON
SKKH 323/12 E
Fig. 4L: Power dissipation of three modules vs. direct and
rms current
Fig. 4R: Power dissipation of three modules vs. case
temperature
Fig. 5: Recovered charge vs. current decrease
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
© by SEMIKRON
Rev. 4 – 11.11.2013
3
SKKH 323/12 E
Fig. 9: Gate trigger characteristics
SKKH
SEMIPACK 3
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
4
Rev. 4 – 11.11.2013
© by SEMIKRON
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