Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
PBSS4140U
40 V low VCEsat NPN transistor
Product data sheet
Supersedes data of 2001 Mar 27
2001 Jul 13
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140U
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capabilities.
VCEO
collector-emitter voltage
40
V
ICM
peak collector current
2
A
RCEsat
equivalent on-resistance
<500
mΩ
• Improved device reliability due to reduced heat
generation.
• Enhanced performance over SOT231A general purpose
packaged transistors.
PARAMETER
MAX.
UNIT
PINNING
PIN
APPLICATIONS
DESCRIPTION
• General purpose switching and muting
1
base
• LCD backlighting
2
emitter
• Supply line switching circuits
3
collector
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
3
handbook, halfpage
3
DESCRIPTION
NPN low VCEsat transistor in a SOT323 plastic package.
PNP complement: PBSS5140U.
1
2
1
MARKING
TYPE NUMBER
PBSS4140U
2
Top view
MARKING CODE
41t
Fig.1
MAM062
Simplified outline SOT323 and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IBM
peak base current
−
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
250
mW
Tamb ≤ 25 °C; note 2
−
350
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
2001 Jul 13
2
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140U
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to
ambient
VALUE
UNIT
in free air; note 1
500
K/W
in free air; note 2
357
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off
current
VCB = 40 V; IC = 0
−
−
100
nA
VCB = 40 V; IC = 0; Tamb = 150 °C
−
−
50
μA
ICEO
collector-emitter cut-off
current
VCE = 30 V; IB = 0
−
−
100
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
−
−
VCE = 5 V; IC = 500 mA
300
−
900
VCE = 5 V; IC = 1 A
200
−
−
IC = 100 mA; IB = 1 mA
−
−
200
mV
IC = 500 mA; IB = 50 mA
−
−
250
mV
IC = 1 A; IB = 100 mA
−
−
500
mV
VCEsat
collector-emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
−
260
<500
mΩ
VBEsat
base-emitter saturation
voltage
IC = 1 A; IB = 100 mA
−
−
1.2
V
VBEon
base-emitter turn-on voltage VCE = 5 V; IC = 1 A
−
−
1.1
V
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
10
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Jul 13
3
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140U
MLD660
1000
MLD656
10
handbook, halfpage
handbook, halfpage
hFE
800
VBE
(1)
(V)
600
(2)
(1)
1
400
(2)
(3)
(3)
200
0
10−1
1
102
10
10−1
10−1
103
104
IC (mA)
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD657
103
handbook, halfpage
10
102
Base-emitter voltage as a function of
collector current; typical values.
MLD658
102
handbook, halfpage
VCEsat
103
104
IC (mA)
RCEsat
(Ω)
(mV)
(1)
102
10
(2)
(3)
(1)
10
(2)
1
(3)
1
1
10
102
103
IC (mA)
10−1
10−1
104
IC/IB = 10.
1
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Jul 13
4
10
10−2
10−3
10−4
IC (mA)
Equivalent on-resistance as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140U
MLD659
400
handbook, halfpage
fT
(MHz)
300
200
100
0
0
200
400
600
1000
800
IC (mA)
VCE = 10 V.
Fig.6
Transition frequency as a function of
collector current; typical values.
2001 Jul 13
5
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140U
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2001 Jul 13
REFERENCES
IEC
JEDEC
EIAJ
SC-70
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140U
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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reserves the right to make changes to information
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Jul 13
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/02/pp8
Date of release: 2001 Jul 13
Document order number: 9397 750 08427
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