DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Oct 09 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability: IC and ICM VCEO collector-emitter voltage −50 V • Higher efficiency leading to less heat generation IC collector current (DC) −2 A • Reduced printed-circuit board requirements ICM peak collector current −3 A • Cost effective alternative to MOSFETs in specific applications. RCEsat equivalent on-resistance 150 mΩ PARAMETER MAX. UNIT PINNING PIN APPLICATIONS • Power management DESCRIPTION 1 base – DC/DC converters 2 emitter – Supply line switching 3 collector – Battery charger – LCD backlighting • Peripheral drivers handbook, halfpage – Driver in low supply voltage applications (e.g. lamps and LEDs) 3 3 – Inductive load driver (e.g. relays, buzzers and motors). 1 DESCRIPTION 2 1 PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. Top view 2 MAM256 MARKING MARKING CODE(1) TYPE NUMBER PBSS5250T Fig.1 Simplified outline (SOT23) and symbol. 3H* Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5250T 2003 Oct 09 − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −2 A ICM peak collector current − −3 A IB base current (DC) − −300 mA Ptot total power dissipation single peak Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 300 mW − 480 mW Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 2003 Oct 09 3 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = −50 V; IE = 0 − − −100 nA VCB = −50 V; IE = 0; Tj = 150 °C − − −50 μA nA IEBO emitter cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −2 V; IC = 0.5 A 200 − − VCE = −2 V; IC = 1 A; note 1 200 − − VCE = −2 V; IC = 2 A; note 1 130 − − IC = −0.5 A; IB = −50 mA − − −90 mV IC = −1 A; IB = −50 mA − − −180 mV IC = −2 A; IB = −100 mA − − −300 mV VCEsat collector-emitter saturation voltage RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − − 150 mΩ VBEsat base-emitter saturation voltage IC = −2 A; IB = −100 mA; note 1 − − −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1 −1.2 − − V fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 35 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2003 Oct 09 4 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Oct 09 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 5 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Oct 09 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/01/pp7 Date of release: 2003 Oct 09 Document order number: 9397 750 11904