Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
PBSS5250T
50 V, 2 A
PNP low VCEsat (BISS) transistor
Product data sheet
2003 Oct 09
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250T
QUICK REFERENCE DATA
FEATURES
• Low collector-emitter saturation voltage VCEsat
SYMBOL
• High collector current capability: IC and ICM
VCEO
collector-emitter voltage
−50
V
• Higher efficiency leading to less heat generation
IC
collector current (DC)
−2
A
• Reduced printed-circuit board requirements
ICM
peak collector current
−3
A
• Cost effective alternative to MOSFETs in specific
applications.
RCEsat
equivalent on-resistance
150
mΩ
PARAMETER
MAX.
UNIT
PINNING
PIN
APPLICATIONS
• Power management
DESCRIPTION
1
base
– DC/DC converters
2
emitter
– Supply line switching
3
collector
– Battery charger
– LCD backlighting
• Peripheral drivers
handbook, halfpage
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
3
3
– Inductive load driver (e.g. relays, buzzers and motors).
1
DESCRIPTION
2
1
PNP BISS transistor in a SOT23 plastic package offering
ultra low VCEsat and RCEsat parameters.
Top view
2
MAM256
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS5250T
Fig.1 Simplified outline (SOT23) and symbol.
3H*
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS5250T
2003 Oct 09
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−2
A
ICM
peak collector current
−
−3
A
IB
base current (DC)
−
−300
mA
Ptot
total power dissipation
single peak
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 2
300
mW
−
480
mW
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
in free air; note 1
417
K/W
in free air; note 2
260
K/W
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
2003 Oct 09
3
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250T
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −50 V; IE = 0
−
−
−100
nA
VCB = −50 V; IE = 0; Tj = 150 °C
−
−
−50
μA
nA
IEBO
emitter cut-off current
VEB = −5 V; IC = 0
−
−
−100
hFE
DC current gain
VCE = −2 V; IC = 0.5 A
200
−
−
VCE = −2 V; IC = 1 A; note 1
200
−
−
VCE = −2 V; IC = 2 A; note 1
130
−
−
IC = −0.5 A; IB = −50 mA
−
−
−90
mV
IC = −1 A; IB = −50 mA
−
−
−180
mV
IC = −2 A; IB = −100 mA
−
−
−300
mV
VCEsat
collector-emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = −2 A; IB = −200 mA; note 1
−
−
150
mΩ
VBEsat
base-emitter saturation voltage
IC = −2 A; IB = −100 mA; note 1
−
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −1 A; note 1
−1.2
−
−
V
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
35
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Oct 09
4
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Oct 09
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
5
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Oct 09
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/01/pp7
Date of release: 2003 Oct 09
Document order number: 9397 750 11904
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