UNISONIC TECHNOLOGIES CO., LTD 8N70K-MT Power MOSFET 8.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N70K-MT is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON) < 1.4Ω @ VGS=10V, ID=4A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N70KL-TF1-T 8N70KG-TF1-T 8N70KL-TF2-T 8N70KG-TF2-T 8N70KL-TF3T-T 8N70KG-TF3T-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220F3 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-034.C 8N70K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 700 V ±30 V TC=25°C 8 A Continuous ID Drain Current TC=100°C 4.8 A 32 A Pulsed (Note 4) IDM Avalanche Current Repetitive (Note 3) IAS 8 A Avalanche Energy Single Pulsed (Note 3) EAS 300 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.5 V/ns Junction Temperature TJ +150 °C Power Dissipation (TC=25°C) PD 49 W Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 9.37mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 8A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case Note: 3urface mounted on FR4 board t≤10sec. SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 2.55 UNIT °C/W °C/W 2 of 6 QW-R205-034.C 8N70K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=700V, VGS=0V VDS=560V, TC=125°С VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, Gate to Source Charge QGS ID=1.3A, IG=100μA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD =30V, VGS=10V, ID =0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Integral reverse diode in the MOSFET Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=8A, VGS=0V Reverse Recovery Time tRR IS=8A, VGS=0V, di/dt = 100A/μs Reverse Recovery Charge QRR Notes: 1. Essentially independent of operating temperature. 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 2.0 1 100 +10 -10 V µA µA nA nA 4.0 1.4 V Ω 1120 113 21 pF pF pF 26 8 6 82 85 125 60 nC nC nC ns ns ns ns 8 32 1.4 490 4.1 A A V ns μC 3 of 6 QW-R205-034.C 8N70K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R205-034.C 8N70K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R205-034.C 8N70K-MT Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Drain-Source On-State Resistance Characteristics Drain Current, ID (A) 5 4 ID=4A, VGS=10V 3 2 1 0 0 1.5 3 4.5 7.5 6 Drain to Source Voltage, VDS (V) Body-Diode Continuous Current vs. Source to Drain Voltage Body-Diode Continuous Current, IS (A) 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R205-034.C