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Analog Power
AM90P10-30P
P-Channel 100-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
VDS (V)
-100
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
rDS(on) (mΩ)
38 @ VGS = -10V
43 @ VGS = -5.5V
-80a
DRAIN
connected
to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
VDS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
a
TC=25°C
ID
-80
Continuous Drain Current
IDM
Pulsed Drain Current b
-320
IS
110
Continuous Source Current (Diode Conduction) a
a
T
=25°C
P
300
Power Dissipation
C
D
TJ, Tstg -55 to 150
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
ID(A)
a
Symbol Maximum
RθJA
62.5
RθJC
1
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM90P10-30P_1B
Analog Power
AM90P10-30P
Electrical Characteristics
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
rDS(on)
Forward Transconductance
Diode Forward Voltage
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = -250 uA
VDS = 0 V, VGS = ±20 V
VDS = -80 V, VGS = 0 V
VDS = -80 V, VGS = 0 V, TJ = 55°C
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -40 A
VGS = -5.5 V, ID = -36 A
VDS = -15 V, ID = -20 A
IS = -55 A, VGS = 0 V
Dynamic
VDS = -50 V, VGS = -5.5 V,
ID = -20 A
VDS = -50 V, RL = 2.5 Ω,
ID = -20 A,
VGEN = -10 V, RGEN = 6 Ω
VDS = -15 V, VGS = 0 V, f = 1 MHz
Min
Typ
Max
1
±100
-1
-25
120
Unit
V
nA
uA
A
38
43
30
-0.91
164
51
77
26
65
266
111
15378
774
530
mΩ
S
V
nC
ns
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation
where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application,
Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part.
APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2
Publication Order Number:
DS_AM90P10-30P_1B
Analog Power
AM90P10-30P
Typical Electrical Characteristics
0.1
40
0.08
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
4V
0.06
0.04
4.5V
0.02
30
20
10
5V,5.5V,6V,8V,10V
0
0
0
10
20
30
0
40
ID-Drain Current (A)
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
0.1
100
TJ = 25°C
ID = -20A
0.09
TJ = 25°C
0.08
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
1
0.07
0.06
0.05
0.04
0.03
0.02
10
1
0.1
0.01
0
0.01
0
2
4
6
8
10
0.2
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
40
20000
10V,8V,6V,5.5V,5V
18000
F = 1MHz
Ciss
16000
30
4.5V
Capacitance (pf)
ID - Drain Current (A)
0.4
20
4V
10
14000
12000
10000
8000
6000
4000
Coss
2000
0
Crss
0
0
0.5
1
1.5
2
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AM90P10-30P_1B
Analog Power
AM90P10-30P
Typical Electrical Characteristics
2.5
VDS = -50V
ID = -20A
9
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
7
6
5
4
3
2
2
1.5
1
1
0
0.5
0
100
200
300
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
1000
PEAK TRANSIENT POWER (W)
800
10 uS
100
100 uS
1 mS
ID Current (A)
0
10 mS
10
100 mS
1 SEC
1
10 SEC
100 SEC
DC
1
0.1
Idm limit
Limited by
RDS
700
600
500
400
300
200
100
0.01
0.1
1
10
100
0
0.001
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
0.1
RθJA = 62.5 °C /W
0.1
0.05
P(pk)
0.02
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM90P10-30P_1B
Analog Power
AM90P10-30P
Package Information
© Preliminary
5
Publication Order Number:
DS_AM90P10-30P_1B