Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PBSS4160T
60 V, 1 A
NPN low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2003 Jun 24
2004 May 12
NXP Semiconductors
Product data sheet
60 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4160T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
SYMBOL
• High collector current capability IC and ICM
VCEO
collector-emitter voltage
60
V
IC
collector current (DC)
1
A
• Reduces printed-circuit board area required
ICM
peak collector current
2
A
• Cost effective replacement for medium power transistor
BCP55 and BCX55.
RCEsat
equivalent on-resistance
250
mΩ
• High efficiency, reduces heat generation
PARAMETER
MAX.
UNIT
PINNING
APPLICATIONS
PIN
• Major application segments:
– Automotive 42 V power
– Telecom infrastructure
– Industrial.
DESCRIPTION
1
base
2
emitter
3
collector
• Power management:
– DC-to-DC conversion
handbook, halfpage
3
– Supply line switching.
3
• Peripheral driver
1
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load driver (e.g. relays,
buzzers and motors).
1
Top view
2
2
MAM255
DESCRIPTION
Fig.1 Simplified outline (SOT23) and symbol.
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5160T.
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS4160T
*U5
Note
1. * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
ORDERING INFORMATION
TYPE NUMBER
PBSS4160T
2004 May 12
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
60 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4160T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
80
V
VCEO
collector-emitter voltage
open base
−
60
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
note 1
−
0.9
A
note 2
−
1
A
t = 1 ms or limited by Tj(max)
−
2
A
ICM
peak collector current
IB
base current (DC)
−
300
mA
IBM
peak base current
tp ≤ 300 μs; δ ≤ 0.02
−
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
270
mW
Tamb ≤ 25 °C; note 2
−
400
mW
Tamb ≤ 25 °C; notes 1 and 3
−
1.25
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
3. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 10 ms.
MLE128
500
handbook, halfpage
Ptot
(mW)
400
(1)
300
(2)
200
100
0
0
40
80
120
160
Tamb (°C)
(1) Device mounted with 1 cm2 collector tab.
(2) Device mounted on standard footprint.
Fig.2
Power derating curves.
2004 May 12
3
NXP Semiconductors
Product data sheet
60 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4160T
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to
ambient
VALUE
UNIT
in free air; note 1
465
K/W
in free air; note 2
312
K/W
in free air; notes 1 and 3
100
K/W
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
3. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 10 ms.
MLE127
103
handbook, full pagewidth
δ=1
Zth
(K/W)
0.75
0.5
102
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
Mounted on printed-circuit board; standard footprint.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 May 12
4
tp (s)
103
NXP Semiconductors
Product data sheet
60 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4160T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
CONDITIONS
collector-base cut-off current
MIN.
TYP.
MAX.
UNIT
VCB = 60 V; IE = 0 A
−
−
100
nA
VCB = 60 V; IE = 0 A; Tj = 150 °C
−
−
50
μA
ICES
collector-emitter cut-off current
VCE = 60 V; VBE = 0 A
−
−
100
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0 A
−
−
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
250
400
−
VCE = 5 V; IC = 500 mA; note 1
200
350
−
VCE = 5 V; IC = 1 A; note 1
100
150
−
IC = 100 mA; IB = 1 mA
−
90
110
mV
IC = 500 mA; IB = 50 mA
−
110
140
mV
VCEsat
collector-emitter saturation voltage
IC = 1 A; IB = 100 mA; note 1
−
200
250
mV
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 50 mA
−
0.95
1.1
V
RCEsat
equivalent on-resistance
IC = 1 A; IB = 100 mA; note 1
−
200
250
mΩ
VBEon
base-emitter turn-on voltage
VCE = 5 V; IC = 1 A
−
0.82
0.9
V
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
220
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0 A; f = 1 MHz −
5.5
10
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
MLE130
800
MLE133
1.2
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
600
(1)
(1)
0.8
(2)
(2)
(3)
400
0.4
(3)
200
0
10−1
1
10
102
0
10−1
103
104
IC (mA)
1
VCE = 5 V.
(1) Tamb = 100 °C.
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.4
Fig.5
DC current gain as a function of collector
current; typical values.
2004 May 12
5
10
102
103
104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
60 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4160T
MLE135
1
MLE104
1
handbook, halfpage
handbook, halfpage
VCEsat
(V)
VCEsat
(V)
10−1
10−1
(2) (1)
10−2
(3)
(1)
(3)
10−3
10−1
1
10
102
10−2
10−1
103
104
IC (mA)
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
1
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLE129
1
10
(2)
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLE134
1.2
handbook, halfpage
handbook, halfpage
VBEsat
(V)
VCEsat
(V)
(1)
(2)
0.8
(3)
(1)
10−1
(2)
10−2
10−1
1
10
102
0.4
0
10−1
103
104
IC (mA)
1
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 May 12
6
10
102
103
104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
60 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4160T
MLE131
2
(6)
handbook, halfpage
(5)
(4)
(3)
(2)
IC
(A)
MLE132
103
handbook, halfpage
(1)
RCEsat
(Ω)
1.6
102
(7)
(8)
1.2
(9)
10
(10)
0.8
1
0.4
(1)
(2)
10−1
10−1
0
0
2
1
3
4
5
VCE (V)
1
10
(3)
102
103
104
IC (mA)
Tamb = 25 °C.
(1)
(2)
(3)
(4)
IB = 60 mA.
IB = 54 mA.
IB = 48 mA.
IB = 42 mA.
(5)
(6)
(7)
(8)
IB = 36 mA.
IB = 30 mA.
IB = 24 mA.
IB = 18 mA.
(9) IB = 12 mA.
(10) IB = 6 mA.
IC/IB = 20.
(1) Tamb = 100 °C.
(3) Tamb = −55 °C.
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
Fig.10 Collector current as a function of
collector-emitter voltage; typical values.
2004 May 12
(2) Tamb = 25 °C.
7
NXP Semiconductors
Product data sheet
60 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4160T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 May 12
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
8
NXP Semiconductors
Product data sheet
60 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS4160T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 May 12
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/02/pp10
Date of release: 2004 May 12
Document order number: 9397 750 13198
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