DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM VCEO collector-emitter voltage 60 V IC collector current (DC) 1 A • Reduces printed-circuit board area required ICM peak collector current 2 A • Cost effective replacement for medium power transistor BCP55 and BCX55. RCEsat equivalent on-resistance 250 mΩ • High efficiency, reduces heat generation PARAMETER MAX. UNIT PINNING APPLICATIONS PIN • Major application segments: – Automotive 42 V power – Telecom infrastructure – Industrial. DESCRIPTION 1 base 2 emitter 3 collector • Power management: – DC-to-DC conversion handbook, halfpage 3 – Supply line switching. 3 • Peripheral driver 1 – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). 1 Top view 2 2 MAM255 DESCRIPTION Fig.1 Simplified outline (SOT23) and symbol. NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5160T. MARKING MARKING CODE(1) TYPE NUMBER PBSS4160T *U5 Note 1. * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. ORDERING INFORMATION TYPE NUMBER PBSS4160T 2004 May 12 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 60 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) note 1 − 0.9 A note 2 − 1 A t = 1 ms or limited by Tj(max) − 2 A ICM peak collector current IB base current (DC) − 300 mA IBM peak base current tp ≤ 300 μs; δ ≤ 0.02 − 1 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 270 mW Tamb ≤ 25 °C; note 2 − 400 mW Tamb ≤ 25 °C; notes 1 and 3 − 1.25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 3. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 10 ms. MLE128 500 handbook, halfpage Ptot (mW) 400 (1) 300 (2) 200 100 0 0 40 80 120 160 Tamb (°C) (1) Device mounted with 1 cm2 collector tab. (2) Device mounted on standard footprint. Fig.2 Power derating curves. 2004 May 12 3 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 465 K/W in free air; note 2 312 K/W in free air; notes 1 and 3 100 K/W Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 3. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 10 ms. MLE127 103 handbook, full pagewidth δ=1 Zth (K/W) 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 Mounted on printed-circuit board; standard footprint. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 May 12 4 tp (s) 103 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO CONDITIONS collector-base cut-off current MIN. TYP. MAX. UNIT VCB = 60 V; IE = 0 A − − 100 nA VCB = 60 V; IE = 0 A; Tj = 150 °C − − 50 μA ICES collector-emitter cut-off current VCE = 60 V; VBE = 0 A − − 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 250 400 − VCE = 5 V; IC = 500 mA; note 1 200 350 − VCE = 5 V; IC = 1 A; note 1 100 150 − IC = 100 mA; IB = 1 mA − 90 110 mV IC = 500 mA; IB = 50 mA − 110 140 mV VCEsat collector-emitter saturation voltage IC = 1 A; IB = 100 mA; note 1 − 200 250 mV VBEsat base-emitter saturation voltage IC = 1 A; IB = 50 mA − 0.95 1.1 V RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA; note 1 − 200 250 mΩ VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A − 0.82 0.9 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 220 − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz − 5.5 10 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. MLE130 800 MLE133 1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 600 (1) (1) 0.8 (2) (2) (3) 400 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 5 V. (1) Tamb = 100 °C. VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 2004 May 12 5 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T MLE135 1 MLE104 1 handbook, halfpage handbook, halfpage VCEsat (V) VCEsat (V) 10−1 10−1 (2) (1) 10−2 (3) (1) (3) 10−3 10−1 1 10 102 10−2 10−1 103 104 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. 1 (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. MLE129 1 10 (2) 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. MLE134 1.2 handbook, halfpage handbook, halfpage VBEsat (V) VCEsat (V) (1) (2) 0.8 (3) (1) 10−1 (2) 10−2 10−1 1 10 102 0.4 0 10−1 103 104 IC (mA) 1 Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 May 12 6 10 102 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T MLE131 2 (6) handbook, halfpage (5) (4) (3) (2) IC (A) MLE132 103 handbook, halfpage (1) RCEsat (Ω) 1.6 102 (7) (8) 1.2 (9) 10 (10) 0.8 1 0.4 (1) (2) 10−1 10−1 0 0 2 1 3 4 5 VCE (V) 1 10 (3) 102 103 104 IC (mA) Tamb = 25 °C. (1) (2) (3) (4) IB = 60 mA. IB = 54 mA. IB = 48 mA. IB = 42 mA. (5) (6) (7) (8) IB = 36 mA. IB = 30 mA. IB = 24 mA. IB = 18 mA. (9) IB = 12 mA. (10) IB = 6 mA. IC/IB = 20. (1) Tamb = 100 °C. (3) Tamb = −55 °C. Fig.11 Equivalent on-resistance as a function of collector current; typical values. Fig.10 Collector current as a function of collector-emitter voltage; typical values. 2004 May 12 (2) Tamb = 25 °C. 7 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 May 12 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 8 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 May 12 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 May 12 Document order number: 9397 750 13198