Data Sheet

PBSS4160DPN
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Rev. 03 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
1.2 Features
„
„
„
„
„
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„
„
„
„
Complementary MOSFET driver
Half and full bridge motor drivers
Dual low power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
collector-emitter voltage
open base
Min
Typ
Max
Unit
-
-
60
V
-
-
1
A
-
-
2
A
-
200
250
mΩ
-
-
−60
V
TR1 (NPN)
VCEO
IC
collector current (DC)
ICM
peak collector current
RCEsat
[1]
single pulse; tp ≤ 1 ms
collector-emitter saturation
resistance
IC = 1 A; IB = 100 mA
collector-emitter voltage
open base
[2]
TR2 (PNP)
VCEO
[1]
IC
collector current (DC)
ICM
peak collector current
single pulse; tp ≤ 1 ms
collector-emitter saturation
resistance
IC = −1 A; IB = −100 mA
RCEsat
[2]
-
-
−900
mA
-
-
−2
A
-
250
330
mΩ
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
emitter TR1
2
base TR1
3
collector TR2
4
emitter TR2
5
base TR2
6
collector TR1
Simplified outline
6
5
4
1
2
3
Symbol
6
5
4
TR2
TR1
1
2
3
sym019
3. Ordering information
Table 3.
Ordering information
Type number
PBSS4160DPN
Package
Name
Description
Version
SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4160DPN
B4
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
80
V
VCEO
collector-emitter voltage
open base
-
60
V
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
NPN
PNP
both
ICM
peak collector current
IB
base current (DC)
IBM
peak base current
single pulse; tp ≤ 1 ms
single pulse; tp ≤ 1 ms
PBSS4160DPN_3
Product data sheet
-
5
V
[1]
-
870
mA
[2]
-
1
A
[1]
-
770
mA
[2]
-
900
mA
[3]
-
1
A
-
2
A
-
300
mA
-
1
A
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
2 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Ptot
Parameter
Conditions
total power dissipation
Tamb ≤ 25 °C
Min
Max
Unit
[1]
-
290
mW
[2]
-
370
mW
[3]
-
450
mW
[1]
-
420
mW
[2]
-
560
mW
[3]
-
700
mW
Per device
Tamb ≤ 25 °C
total power dissipation
Ptot
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa493
800
(1)
Ptot
(mW)
600
(2)
(3)
400
200
0
0
40
80
120
160
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
3 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from
junction to ambient
Rth(j-a)
in free air
Min
Typ
Max
Unit
[1]
-
-
431
K/W
[2]
-
-
338
K/W
[3]
-
-
278
K/W
-
-
105
K/W
thermal resistance from
junction to solder point
Rth(j-sp)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa494
103
Zth(j-a)
(K/W)
δ=1
0.75
0.50
0.33
102
0.20
0.10
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
4 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
006aaa495
103
Zth(j-a)
(K/W)
δ=1
0.75
0.50
102
0.20
0.33
0.10
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa496
103
Zth(j-a)
(K/W)
δ=1
0.75
102
0.50
0.20
0.33
0.10
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
5 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
collector-base cut-off
current
VCB = 60 V; IE = 0 A
-
-
100
nA
VCB = 60 V; IE = 0 A;
Tj = 150 °C
-
-
50
μA
ICES
collector-emitter cut-off
current
VCE = 60 V; VBE = 0 V
-
-
100
nA
IEBO
emitter-base cut-off current VEB = 5 V; IC = 0 A
ICBO
VBEsat
base-emitter saturation
voltage
IC = 1 A; IB = 50 mA
[1]
VBEon
base-emitter turn-on
voltage
VCE = 5 V; IC = 1 A
[1]
DC current gain
VCE = 5 V; IC = 1 mA
-
-
100
nA
-
0.95
1.1
V
-
0.82
0.9
V
TR1 (NPN)
hFE
VCEsat
collector-emitter saturation
voltage
250
500
-
VCE = 5 V; IC = 500 mA
[1]
200
420
-
VCE = 5 V; IC = 1 A
[1]
100
180
-
IC = 100 mA; IB = 1 mA
-
90
110
mV
IC = 500 mA;
IB = 50 mA
-
115
140
mV
IC = 1 A; IB = 100 mA
[1]
-
200
250
mV
[1]
-
200
250
mΩ
-
11
-
ns
-
78
-
ns
-
90
-
ns
RCEsat
collector-emitter saturation
resistance
IC = 1 A; IB = 100 mA
td
delay time
tr
rise time
ton
turn-on time
IC = 0.5 A;
IBon = 25 mA;
IBoff = −25 mA
ts
storage time
-
340
-
ns
tf
fall time
-
160
-
ns
toff
turn-off time
-
500
-
ns
fT
transition frequency
VCE = 10 V;
IC = 50 mA;
f = 100 MHz
150
220
-
MHz
Cc
collector capacitance
VCB = 10 V;
IE = ie = 0 A; f = 1 MHz
-
5.5
10
pF
DC current gain
VCE = −5 V; IC = −1 mA
200
350
-
TR2 (PNP)
hFE
VCE = −5 V;
IC = −500 mA
[1]
150
250
-
VCE = −5 V; IC = −1 A
[1]
100
160
-
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
6 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Table 7.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEsat
collector-emitter saturation
voltage
IC = −100 mA;
IB = −1 mA
-
−110
−165
mV
IC = −500 mA;
IB = −50 mA
-
−120
−175
mV
IC = −1 A; IB = −100 mA
[1]
-
−250
−330
mV
[1]
-
250
330
mΩ
-
11
-
ns
-
30
-
ns
RCEsat
collector-emitter saturation
resistance
IC = −1 A; IB = −100 mA
td
delay time
tr
rise time
ton
turn-on time
IC = −0.5 A;
IBon = −25 mA;
IBoff = 25 mA
-
41
-
ns
ts
storage time
-
205
-
ns
tf
fall time
-
55
-
ns
toff
turn-off time
-
260
-
ns
fT
transition frequency
VCE = −10 V;
IC = −50 mA;
f = 100 MHz
150
185
-
MHz
Cc
collector capacitance
VCB = −10 V;
IE = ie = 0 A; f = 1 MHz
-
9
15
pF
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
7 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
006aaa505
800
hFE
006aaa506
1.2
VBE
(V)
(1)
1.0
600
(2)
0.8
(1)
400
(2)
0.6
(3)
200
(3)
0.4
0
10−1
1
102
10
0.2
10−1
103
104
IC (mA)
1
VCE = 5 V
VCE = 5 V
10
(1) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 100 °C
Fig 5.
TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 6.
006aaa513
1
102
103
104
IC (mA)
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
006aaa514
1
VCEsat
(V)
VCEsat
(V)
10−1
(1)
(2)
10−1
(1)
(2)
(3)
10−2
10−1
1
10
(3)
10−2
102
103
104
IC (mA)
10−3
10−1
1
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
103
104
IC (mA)
(3) IC/IB = 10
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
PBSS4160DPN_3
Product data sheet
102
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
Fig 7.
10
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
8 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
006aaa509
1.2
VBEsat
(V)
006aaa515
103
RCEsat
(Ω)
1.0
102
(1)
0.8
10
(2)
0.6
(3)
(1)
(2)
(3)
1
0.4
0.2
10−1
1
10
102
103
104
IC (mA)
10−1
10−1
IC/IB = 20
1
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = −55 °C
Fig 9.
10
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
006aaa511
2.0
IB (mA) = 65.0
58.5
52.0 45.5
39.0
32.5
IC
(A)
1.6
26.0
1.2
Fig 10. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa516
103
RCEsat
(Ω)
102
19.5
13.0
10
6.5
0.8
(1)
1
(2)
0.4
(3)
0
0
1
2
3
4
5
10−1
10−1
1
VCE (V)
Tamb = 25 °C
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
Fig 12. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
9 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
006aaa474
600
(1)
006aaa476
−1.0
VBE
(V)
hFE
−0.8
400
(1)
(2)
(2)
−0.6
(3)
200
(3)
−0.4
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
−0.2
−10−1
VCE = −5 V
−1
−10
−102
−103
−104
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 100 °C
Fig 13. TR2 (PNP): DC current gain as a function of
collector current; typical values
006aaa489
−1
Fig 14. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
006aaa490
−1
VCEsat
(V)
VCEsat
(V)
−10−1
−10−1
(1)
(2)
(1)
(2)
(3)
(3)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
−10−2
−10−1
−1
−102
−103
−104
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 15. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 16. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
PBSS4160DPN_3
Product data sheet
−10
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
10 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
006aaa477
−1.1
VBEsat
(V)
006aaa491
103
RCEsat
(Ω)
−0.9
102
(1)
−0.7
(2)
10
−0.5
(3)
(1)
(2)
(3)
1
−0.3
−0.1
−10−1
−1
−10
−102
−103
−104
IC (mA)
10−1
−10−1
IC/IB = 20
−1
(1) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = −55 °C
Fig 17. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
006aaa478
IB (mA) = −35.0
−31.5
−28.0
−24.5
−21.0
IC
(A)
−1.6
−102
−103
−104
IC (mA)
IC/IB = 20
(2) Tamb = 25 °C
−2.0
−10
Fig 18. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa492
103
RCEsat
(Ω)
−17.5
−14.0
102
−10.5
−1.2
−7.0
10
(1)
−0.8
−3.5
(2)
1
−0.4
(3)
0.0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 19. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig 20. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
11 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
8. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig 21. TR1 (NPN): BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mlb826
IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω
Fig 22. TR1 (NPN): Test circuit for switching times
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
12 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
− IB
input pulse
(idealized waveform)
90 %
− I Bon (100 %)
10 %
− I Boff
output pulse
(idealized waveform)
− IC
90 %
− I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig 23. TR2 (PNP): BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mgd624
IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω
Fig 24. TR2 (PNP): Test circuit for switching times
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
13 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
9. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.40
0.25
0.95
0.26
0.10
1.9
Dimensions in mm
04-11-08
Fig 25. Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
PBSS4160DPN
[1]
SOT457
4 mm pitch, 8 mm tape and reel; T1
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
PBSS4160DPN_3
Product data sheet
10000
[2]
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
14 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
11. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
3.30 2.825
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 26. Reflow soldering footprint
5.30
solder lands
5.05
0.45 1.45 4.45
solder resist
occupied area
1.40
msc423
4.30
Dimensions in mm
Fig 27. Wave soldering footprint
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
15 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4160DPN_3
20091211
Product data sheet
-
PBSS4160DPN_2
Modifications:
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 1, 7 and 15: updated
PBSS4160DPN_2
20050714
Product data sheet
-
PBSS4160DPN_1
PBSS4160DPN_1
20040603
Objective data sheet
-
-
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
16 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS4160DPN_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
17 of 18
PBSS4160DPN
NXP Semiconductors
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
Packing information . . . . . . . . . . . . . . . . . . . . 14
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 December 2009
Document identifier: PBSS4160DPN_3
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