Datasheet

UNISONIC TECHNOLOGIES CO., LTD
9N50K-MT
Power MOSFET
9A, 500V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 9N50K-MT is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance, superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 9N50K-MT is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.

FEATURES
* RDS(ON) < 0.85Ω @ VGS = 10 V, ID = 4.5 A
* High Switching Speed
* Improved dv/dt Capability
* 100% Avalanche Tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
9N50KL-TA3-T
9N50KG-TA3-T
9N50KL-TF3-T
9N50KG-TF3-T
9N50KL-TF1-T
9N50KG-TF1-T
9N50KL-TF2-T
9N50KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
9N50KL-TA3-T
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
(1) T: Tube
(1)Packing Type
(2)Package Type
(3)Green Package
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,
TF2: TO-220F2
(3) L: Lead Free, G: Halogen Free and Lead Free
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
Power MOSFET
MARKING
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous (TC=25°C)
ID
9 (Note 5)
A
Drain Current
Pulsed (Note 2)
IDM
36 (Note 5)
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
360
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
140
W
Power Dissipation
PD
TO-220F/TO-220F1
47
W
TO-220F2
TO-220
1.1
W/°C
Derate above 25°C
P
TO-220F/TO-220F1
D
0.38
W/°C
TO-220F2
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 8mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
UNISONIC TECHNOLOGIES CO., LTD
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θJC
RATING
62.5
0.8
UNIT
°C/W
°C/W
2.62
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VDS=400V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=30V, ID =0.5A, RG =25Ω
Rise Time
tR
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10V
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=9A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP MAX UNIT
500
V
1
10
+100
-100
2.0
4.0
0.85
µA
nA
nA
V
Ω
685
115
12
pF
pF
pF
62
86
149
83
27.2
8.4
6.8
ns
ns
ns
ns
nC
nC
nC
9
36
1.4
A
A
V
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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