UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9N65K-MT
Power MOSFET
9A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N65K-MT is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 9N65K-MT is generally applied in high efficiency switch
mode power supplies and uninterruptible power supplies.
FEATURES
* RDS(ON) < 1.1 Ω @ VGS = 10 V, , ID = 5.1 A
* High Switching Speed
* Improved dv/dt Capability
* 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
9N65K-L-TF2-T
9N65K-G-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous,
VGSS@10V
Drain Current
RATINGS
UNIT
650
V
±30
V
@TC=25°C
9
A
ID
5.4
A
@TC=100°C
36
A
Pulsed (Note 2)
IDM
Avalanche Energy Repetitive (Note 3)
EAS
375
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
2.8
V/ns
Power Dissipation
49
W
PD
Derate above 25°C
0.39
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. L=9.25mH, IAS=9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD≤5.2A, di/dt≤90A/µs, VDD≤BVDSS, TJ≤150°C
5. Drain current limited by maximum junction temperature
SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
62.5
2.54
UNIT
°C/W
°C/W
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ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
ID=250µA, VGS=0V
MIN TYP MAX UNIT
650
∆ BVDSS /∆TJ Reference to 25°C, ID=1mA
Drain-Source Leakage Current
Gate- Source Leakage Current
TEST CONDITIONS
IDSS
Forward
Reverse
IGSS
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0.67
VDS=650V, VGS=0V
VDS=520V, VGS=0V, TJ=125°C
VGS=+30V
VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS= VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5.1A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω,
RD = 62Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain ("Miller") Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
(Note 1)
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=9A,VGS=0V(Note 2)
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
V
V/°C
25
250
+100
-100
2.0
4.0
1.1
µA
nA
nA
V
Ω
870
122
10
pF
pF
pF
65
80
160
84
29.8
8.6
7.3
ns
ns
ns
ns
nC
nC
nC
9
A
36
A
1.5
V
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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