Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF830K-MT
Power MOSFET
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UF830K-MT is a N-Channel enhancement mode
silicon gate power MOSFET is designed high voltage, high speed
power switching applications such as switching regulators,
switching converters, solenoid, motor drivers, relay drivers.

FEATURES
* RDS(ON) < 1.5Ω @ VGS = 10V, ID = 2.5 A
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830KL-TA3-T
UF830KG-TA3-T
UF830KL-TF3-T
UF830KG-TF3-T
UF830KL-TF1-T
UF830KG-TF1-T
UF830KL-TF2-T
UF830KG-TF2-T
UF830KL-TF3T-T
UF830KG-TF3T-T
UF830KL-TM3-T
UF830KG-TM3-T
UF830KL-TMS-T
UF830KG-TMS-T
UF830KL-TMS2-T
UF830KG-TMS2-T
UF830KL-TMS4-T
UF830KG-TMS4-T
UF830KL-TN3-R
UF830KG-TN3-R
UF830KL-TND-R
UF830KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R209-030.E
UF830K-MT

Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-030.E
UF830K-MT

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
VDS
500
V
Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGS
±30
V
Continuous
ID
4.5
A
Drain Current
Pulsed
IDM
18
A
Avalanche Current (Note 2)
IAR
5.0
A
Single Pulsed Avalanche
Single Pulsed (Note 3)
EAS
125
mJ
Energy
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.9
V/ns
TO-220
73
W
TO-220F/TO-220F1
38
W
TO-220F3
PD
Power Dissipation (TC = 25°C) TO-220F2
40
W
TO-251/TO-251S
TO-251S2/ TO-251S4
46
W
TO-252/TO-252D
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 5.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C.
4. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C.

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATINGS
UNIT
62.5
°C/W
100.3
°C/W
1.71
°C/W
3.31
°C/W
3.125
°C/W
2.7
°C/W
θJA
θJC
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UF830K-MT
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 500V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
QG
VDS=50V, ID=1.3A, IG=100μA
Gate to Source Charge
QGS
VGS=10V (Note 1,2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD(ON)
Rise Time
tR
VDD =30V, ID =0.5A, RG =25Ω,
VGS=10V (Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=4.5A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr
IS=4.5A, VGS=0V,
dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
500
2.0
25
100
-100
V
μA
nA
nA
4.0
1.5
V
Ω
420
66
6.5
pF
pF
pF
48
48
42
44
13.8
5.4
6.0
nC
nC
nC
nS
nS
nS
nS
5.5
18
1.6
290
1.8
A
A
V
nS
μC
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
L
Vary tP to Obtain
Required Peak IAS
+
RG
VDD
VGS
DUT
0V
tp
IAS
0.01Ω
Unclamped Energy Test Circuit
Unclamped Energy Waveforms
RL
+
RG
VDD
DUT
VGS
Switching Time Test Circuit
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UF830K-MT

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
tON
tOFF
tDLY(ON)
tDLY(OFF)
tR
VDS
tF
90%
90%
10%
0
10%
90%
VGS
0
50%
10%
PULSE WIDTH
50%
Resistive Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveforms
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UF830K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
Drain Current, ID (µA)

Drain-Source On-State Resistance
Characteristics
7
Continuous Source to Drain
Current, ISD (A)
Drain Current, ID (A)
4
3
2
1
0
0
1
2
3
4
Drain to Source Voltage, VDS (V)
5
Continuous Source to Drain Current vs.
Source to Drain Voltage
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-030.E
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