UNISONIC TECHNOLOGIES CO., LTD
UF3808
Preliminary
POWER MOSFET
140A, 75V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF3808 is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF3808 is suitable for Automotive applications and
Anti-lock Braking System (ABS), etc.
FEATURES
* RDS(ON)<8.0mΩ @ VGS=10V
* High Switching Speed
* Dynamic dv/dt Rating
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
UF3808L-TA3-T
Note: Pin Assignment: G: Gate
UF3808L-TA3-T
Halogen Free
UF3808G-TA3-T
D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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UF3808
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
75
V
Gate-Source Voltage
VGSS
±20
V
140
A
Continuous VGS=10V, TC=25°C
ID
(Note 6)
Drain Current
VGS=10V, TC=100°C
97
A
Pulsed (Note 5)
IDM
550
A
Avalanche Current (Note 5)
IAR
82
A
Avalanche Energy Single Pulse (Note 3)
EAS
430
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
5.5
V/ns
Power Dissipation (TC=25°C)
330
W
PD
Linear Derating Factor
2.2
W/°C
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. L=0.13mH, IAS=82A, VDD=38V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤82A, di/dt≤310A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Repetitive rating; pulse width limited by max. junction temperature.
6. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
62
0.45
UNIT
°С/W
°С/W
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Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
VGS=0V, ID=250µA
∆BVDSS/∆TJ Reference to 25°C, ID=1mA
IDSS
Forward
Reverse
TEST CONDITIONS
IGSS
VDS=75V, VGS=0V
VDS=60V, VGS=0V, TJ=150°C
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
MIN
TYP
MAX UNIT
75
V
0.086
V/°C
20
250
200
-200
µA
µA
nA
nA
ON CHARACTERISTICS
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=82A
8.0
mΩ
(Note 1)
Gate Threshold Voltage
VGS(TH) VDS=10V ID=250µA
2.0
4.0
V
Forward Transconductance
gFS
VDS=25V, ID=82A
100
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1510
pF
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
780
pF
Reverse Transfer Capacitance
CRSS
350
pF
SWITCHING PARAMETERS
138 160
nC
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
41
nC
IG=100μA (Note 1)
Gate to Drain ("Miller") Charge
QGD
27
nC
Turn-ON Delay Time
tD(ON)
170
ns
Rise Time
tR
440
ns
VDD=30V, ID=1A, RG=25Ω
VGS=10V (Note 1)
Turn-OFF Delay Time
tD(OFF)
1000
ns
Fall Time
tF
480
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
IS
140
A
Current (Note 1)
Maximum Body-Diode Pulsed Current
ISM
550
A
(Note 3)
TJ=25°C, IS=82A, VGS=0V
1.3
V
Drain-Source Diode Forward Voltage
VSD
(Note 1)
Body Diode Reverse Recovery Time
ns
tRR
93
140
TJ=25°C, IF=82A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
340
510
nC
(Note 1)
Notes: 1. Pulse width ≤ 400µs; duty cycle ≤ 2%.
2. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80%
VDSS.
3. Repetitive rating; pulse width limited by max. junction temperature.
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Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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