Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UK3018BW
Preliminary
Power MOSFET
2.5V DRIVE SILICON
N-CHANNEL MOSFET

DESCRIPTION
The UTC UK3018BW is a Silicon N-channel MOSFET, designed
to minimize on-state resistance while it provides rugged, reliable
and fast switching performance. The product is particularly suited for
low voltage and low current applications such as small servo motor
controllers, power MOSFET gate drivers, and other switching
applications.

FEATURES
* Min VDSS =30V
* RDS(ON) < 5Ω @ VGS=4V
* RDS(ON) < 7Ω @ VGS=2.5V
* Pulsed ID = 400mA
* Low voltage drive (2.5V)

EQUIVALENT CIRCUIT

ORDERING INFORMATION
Order Number
Package
UK3018BWG-AL5-R
SOT-353
UK3018BWG-AL5-R

1
G1
Pin Assignment
2
3
4
S1S2 G2
D2
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AL5: SOT-353
(3)Green Package
(3) G: Halogen Free and Lead Free
5
D1
Packing
Tape Reel
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R209-031.a
UK3018BW

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
100
mA
Drain Current
Pulsed (Note 2)
IDP
400
mA
Power Dissipation (Note 3)
PD
200
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pw≤10µs, Duty cycle≤1%
3. With each pin mounted on the recommended lands.

THERMAL RESISTANCE
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATINGS
625
UNIT
°С/W
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static drain-source on-state resistance
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=10μA
VDS=30V, VGS=0V
VDS=0V, VGS=±20V,
30
VGS(TH)
VDS=3V, ID=100μA
VGS=4V, ID=10mA,
VGS=2.5V, ID=1mA,
0.8
RDS(ON)
TYP MAX UNIT
5
7
1
±1
V
µA
µA
1.5
8
13
V
Ω
Ω
CISS
COSS
CRSS
VDS = 5V, VGS = 0V, f = 1MHz
13
9
4
pF
pF
pF
tD(ON)
tR
tD(OFF)
tF
VGS = 5V, VDD≈5V
ID = 10mA, RL = 500Ω, RG = 10Ω
15
35
80
80
ns
ns
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
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QW-R209-031..a
UK3018BW

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Pulse Width
VGS
RG
ID
D.U.T
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
tD(ON) tR
90%
90%
tD(OFF)
tON
Switching Time Measurement Circuit
tF
tOFF
Switching Time Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-031..a
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