Datasheet

UNISONIC TECHNOLOGIES CO., LTD
1N50A
Preliminary
Power MOSFET
1.0A, 500V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 1N50A is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 1N50A is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.

FEATURES
* RDS(ON) < 8.0Ω @ VGS=10V, ID=0.5A
* High Switching Speed
* 100% Avalanche Tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N50AL-TM3-T
1N50AG-TM3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
1N50AL-TM3-T

Package
TO-251
1
G
Pin Assignment
2
3
D
S
Packing
Tube
(1)Packing Type
(1) T: Tubel
(2)Package Type
(2) TM3: TO-251
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous (TC=25°C)
ID
1 (Note 2)
A
Drain Current
Pulsed (Note 3)
IDM
4 (Note 2)
A
Avalanche Energy
Single Pulsed (Note 4)
EAS
40
mJ
Power Dissipation
25
W
PD
Derate above 25°C
0.2
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 80mH, IAS = 1A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C
5. ISD ≤ 1.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATINGS
110
5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
500
V
1
µA
+100 nA
-100 nA
3.0
6.8
5.0
8.0
V
Ω
125
17
15
290
35
20
pF
pF
pF
32
17
54
18
9
3
0.8
40
35
70
32
15
ns
ns
ns
ns
nC
nC
nC
1
4
1.15
A
A
V
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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1N50A
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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