1N4448

FAST SWITCHING DIODES
1N4448
FEATURES
Silicon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other
case styles including: the SOD-123
case with the type designation
1N4448W, the MiniMELF case with the
type designation LL4448, and the SOT23
case with the type designation
MECHANICAL DATA
Case: DO-35
Weight: apprax: 0.13gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified
Symbol
Value
Unit
Reverse Voltage
VR
75
V
Peak Reverse Voltage
V RM
100
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f ≥ 50 Hz
I0
1501)
mA
Surge Forward Current at t < 1 s and Tj = 25 °C
IFSM
500
mA
Power Dissipation at Tamb = 25 °C
Ptot
5001)
mW
Junction Temperature
Tj
175
°C
Storage Temperature Range
TS
–65 to +175
°C
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Web Site: www.hkmic.com
FAST SWITCHING DIODES
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at IF = 5 mA
at IF = 10 mA
VF
VF
0.62
–
–
–
0.72
1
V
V
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 °C
IR
IR
IR
–
–
–
–
–
–
25
5
50
nA
µA
µA
Reverse Breakdown Voltage
tested with 100 µA Pulses
V(BR)R
100
–
–
V
Capacitance
at VF = VR = 0 V
Ctot
–
–
4
pF
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100
Ω
trr
–
–
4
ns
Thermal Resistance Junction to Ambient Air
RthJA
–
–
3501)
K/W
Recification Efficiency at f = 100 MHz, VRF = 2 V
ηv
0.45
–
–
–
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Rectification Efficiency Measurement Circuit
Web Site: www.hkmic.com
FAST SWITCHING DIODES
RATINGS AND CHARACTERISTIC CURVES 1N4448
Web Site: www.hkmic.com
FAST SWITCHING DIODES
RATINGS AND CHARACTERISTIC CURVES 1N4448
Web Site: www.hkmic.com
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