Data Sheet

PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
package.
NPN complement: PBSS4160V.
1.2 Features
„
„
„
„
„
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to less heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
„ Major application segments
‹ Automotive
‹ Telecom infrastructure
‹ Industrial
„ Power management
‹ DC-to-DC conversion
‹ Supply line switching
„ Peripheral driver
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
VCEO
collector-emitter voltage
open base
IC
collector current (DC)
ICM
peak collector current
RCEsat
equivalent on-resistance
[1]
[1]
IC = −1 A;
IB = −100 mA
Min
Typ
Max
Unit
-
-
−60
V
-
-
−1
A
-
-
−2
A
-
220
330
mΩ
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1, 2, 5, 6
collector
3
base
4
emitter
Simplified outline
6
5
Symbol
1, 2, 5, 6
4
3
4
1
2
sym030
3
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS5160V
-
plastic surface mounted package; 6 leads
SOT666
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS5160V
51
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCBO
Conditions
Min
Max
Unit
collector-base voltage open emitter
-
−80
V
VCEO
collector-emitter
voltage
open base
-
−60
V
VEBO
emitter-base voltage
open collector
-
−5
V
IC
collector current (DC)
[1]
-
−0.9
A
[2]
-
−1
A
-
−2
A
-
−300
mA
ICM
peak collector current
t = 1 ms or limited
by Tj(max)
IB
base current (DC)
IBM
peak base current
Ptot
total power dissipation Tamb ≤ 25 °C
tp ≤ 300 μs; δ ≤ 0.02
−1
A
-
300
mW
[2]
-
500
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
PBSS5160V_3
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
2 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
[1]
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
001aaa714
0.6
Ptot
(W)
(1)
0.4
(2)
0.2
0
0
40
80
120
160
Tamb (°C)
(1) FR4 PCB; 1 cm2 collector mounting pad
(2) FR4 PCB; standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
in free air
Typ
Max
Unit
-
-
415
K/W
[2]
-
-
250
K/W
[1]
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
PBSS5160V_3
Product data sheet
Min
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
3 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
001aaa715
103
Zth
(K/W)
(1)
(2)
(3)
(4)
(5)
102
(6)
(7)
(8)
(9)
10
(10)
1
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 PCB; standard footprint
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 2.
Transient thermal impedance as a function of pulse time; typical values
PBSS5160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
4 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off current
VCB = −60 V; IE = 0 A
-
VCB = −60 V; IE = 0 A;
Tj = 150 °C
-
-
−100
nA
-
−50
μA
VCE = −60 V; VBE = 0 V
-
-
−100
nA
nA
ICES
collector-emitter cut-off current
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0 A
-
-
−100
hFE
DC current gain
VCE = −5 V; IC = −1 mA
200
350
-
VCEsat
collector-emitter saturation
voltage
VCE = −5 V; IC = −500 mA
[1]
150
250
-
VCE = −5 V; IC = −1 A
[1]
100
160
-
IC = −100 mA; IB = −1 mA
-
−110
−160
mV
IC = −500 mA; IB = −50 mA
-
−120
−175
mV
-
−220
−330
mV
-
−0.95
−1.1
V
IC = −1 A; IB = −100 mA
VBEsat
base-emitter saturation voltage
IC = −1 A; IB = −50 mA
[1]
RCEsat
equivalent on-resistance
IC = −1 A; IB = −100 mA
-
220
330
mΩ
VBEon
base-emitter turn-on voltage
IC = −1 A; VCE = −5 V
-
−0.82
−0.9
V
td
delay time
-
11
-
ns
tr
rise time
-
30
-
ns
ton
turn-on time
VCC = −10 V; IC = −0.5 A;
IBon = −0.025 A;
IBoff = 0.025 A
-
41
-
ns
ts
storage time
-
205
-
ns
tf
fall time
-
55
-
ns
toff
turn-off time
-
260
-
ns
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 100 MHz
150
220
-
MHz
Cc
collector capacitance
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
-
9
15
pF
[1]
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS5160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
5 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
001aaa719
600
hFE
001aaa717
−1.2
VBE
(V)
(1)
(1)
−0.8
400
(2)
(2)
(3)
200
−0.4
(3)
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
VCE = −5 V
−1
−102
−103
−104
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 100 °C
Fig 3.
−10
DC current gain as a function of collector
current; typical values
001aaa718
−10
Fig 4.
Base-emitter voltage as a function of collector
current; typical values
VCEsat
(V)
VCEsat
(V)
−1
−1
−10−1
001aaa721
−10
−10−1
(1)
(2)
(1)
(2)
(3)
(3)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
−10−2
−10−1
−1
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
−103
−104
IC (mA)
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS5160V_3
Product data sheet
−102
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
Fig 5.
−10
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
6 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
001aaa722
−1.2
VBEsat
(V)
001aaa723
−1.2
VBEsat
(V)
(1)
(1)
−0.8
−0.8
(2)
(2)
(3)
(3)
−0.4
−0.4
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
IC/IB = 10
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 7.
Base-emitter saturation voltage as a function
of collector current; typical values
Fig 8.
−102
−103
−104
IC (mA)
Base-emitter saturation voltage as a function
of collector-current; typical values
PBSS5160V_3
Product data sheet
−10
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
7 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
−2
IC
(A)
(5)
(4)
−1.6
(3)
(2)
001aaa716
(1)
001aaa720
103
(6)
RCEsat
(Ω)
(6)
(7)
102
(8)
−1.2
(9)
(9)
−0.8
10
(10)
(1)
(2)
1
−0.4
0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
(3)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) IB = −40 mA
(1) Tamb = 100 °C
(2) IB = −36 mA
(2) Tamb = 25 °C
(3) IB = −32 mA
(3) Tamb = −55 °C
(4) IB = −28 mA
(5) IB = −24 mA
(6) IB = −20 mA
(7) IB = −16 mA
(8) IB = −12 mA
(9) IB = −8 mA
(10) IB = −4 mA
Fig 9.
Collector current as a function of
collector-emitter voltage; typical values
Fig 10. Equivalent on-resistance as a function of
collector current; typical values
PBSS5160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
8 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
− IB
input pulse
(idealized waveform)
90 %
− I Bon (100 %)
10 %
− I Boff
output pulse
(idealized waveform)
− IC
90 %
− I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig 11. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mgd624
VCC = −10 V; IC = −0.5 A; IBon = −0.025 A; IBoff = 0.025 A
Fig 12. Test circuit for switching times
PBSS5160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
9 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
8. Package outline
Plastic surface-mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
SOT666
Fig 13. Package outline SOT666
PBSS5160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
10 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
PBSS5160V
SOT666
4 mm pitch, 8 mm tape and reel
-115
3000
[1]
For further information and the availability of packing methods, see Section 12.
PBSS5160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
11 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
10. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS5160V_3
20091214
Product data sheet
-
PBSS5160V_2
Modifications:
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 13 “Package outline SOT666”: updated
PBSS5160V_2
20050404
Product data sheet
-
PBSS5160V_1
PBSS5160V_1
20040420
Objective data sheet
-
-
PBSS5160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
12 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS5160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 14 December 2009
13 of 14
PBSS5160V
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 December 2009
Document identifier: PBSS5160V_3
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