Datasheet

UNISONIC TECHNOLOGIES CO., LTD
15NM50
Preliminary
Power MOSFET
15A, 500V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 15NM50 is an Super Junction MOSFET Structure . It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 15NM50 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.

FEATURES
* RDS(ON) < 0.35Ω @ VGS=10V, ID=7.5A
* By using Super Junction Structure
* Fast Switching
* With 100% Avalanche Tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15NM50L-TF1-T
15NM50G-TF1-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
15NM50L-TF1-T

(1) Packing Type
(1) T: Tube
(2) Package Type
(2) TF1:TO-220F1
(3) Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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15NM50

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
500
V
Gate to Source Voltage
VGSS
±30
V
TC=25°C
15 (Note 2)
A
ID
Continuous Drain Current
TC=100°C
7 (Note 2)
A
Pulsed Drain Current (Note 3)
IDM
44 (Note 2)
A
Single Pulsed Avalanche Energy(Note 4)
EAS
225
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
TC=25°C
52
W
Power Dissipation
PD
Derate above 25°C
0.416
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=2mH, IAS=15A, VDD= 50V, RG=25Ω, Starting TJ=25°C
5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATINGS
62.5
2.4
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
VDS=500V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=500V, TJ=125°C
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS= VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A ,
Gate-Source Charge
QGS
IG=100µA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
Turn-ON Rise Time
tR
VGS=10V (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =15A, VGS=0V
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
500
0.5
2.5
V
V/°C
10
µA
100 µA
±100 nA
4.5
0.35
V
Ω
625
330
15
pF
pF
pF
41
6
12
55
95
295
125
nC
nC
nC
ns
ns
ns
ns
11
44
1.4
A
A
V
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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15NM50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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