Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTC606P-H
Power MOSFET
-6A, -12V, P-CHANNEL 1.8V
TRENCH MOSFET

DESCRIPTION
The UTC UTC606P-H is a P-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance and high switching speed.
The UTC UTC606P-H is suitable for battery management, load
switch and battery protection.

6
5
4
1
2
3
SOT-26
FEATURES
* RDS(ON) < 26mΩ @ VGS= -4.5V, ID= -6A
RDS(ON) < 35mΩ @ VGS= -2.5V, ID= -5A
RDS(ON) < 53mΩ @ VGS= -1.8V, ID= -4A
* High switching speed
* High performance trench technology for extremely low RDS(ON)


SYMBOL
ORDERING INFORMATION
Ordering Number
Note:

UTC606PG-AG6-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-26
1
D
Pin Assignment
2 3 4 5
D G D D
6
S
Packing
Tape Reel
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-B34.b
UTC606P-H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-12
V
Gate-Source Voltage
VGSS
±8
V
Continuous (Note 2)
ID
-6
A
Drain Current
Pulsed
IDM
-20
A
Power Dissipation
PD
300
mW
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction-to-Case

SYMBOL
θJA
θJC
RATINGS
380
110
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-State Resistance
SYMBOL
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
VGS(TH)
∆BVGS( th )
∆TJ
RDS(ON)
TEST CONDITIONS
ID=-250µA, VGS=0V
www.unisonic.com.tw
TYP MAX UNIT
-12
ID=-250µA, Referenced to 25°C
V
VDS=VGS, ID=-250µA
mV/°
C
-3
VDS=-10V, VGS=0V
VGS=+8V, VDS=0V
VGS=-8V, VDS=0V
-0.4
-0.5
ID=-250µA, Referenced to 25°C
2.5
VGS=-4.5V, ID=-6A
VGS=-2.5V, ID=-5A
VGS=-1.8V, ID=-4A
VGS=-4.5V, ID=-6A, TJ=125°C
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-6A
21
26
34
28
On State Drain Current
ID(ON)
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=-6V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note)
Total Gate Charge
QG
VGS=-4.5V, VDS=-6V, ID=-6A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VGS=-4.5V, VDD=-6V, ID=-1A,
RGEN=6Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain–Source
IS
Diode Forward Current
Drain–Source Diode Forward Voltage
VSD
IS=-1.3A,VGS=0V (Note)
Note: Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2.0%
UNISONIC TECHNOLOGIES CO., LTD
MIN
-1
100
-100
µA
nA
nA
-1.5
V
mV/°
C
26
35
53
35
25
mΩ
mΩ
mΩ
mΩ
A
S
1699
679
423
pF
pF
pF
-20
18
3
4.2
11
10
89
70
-0.6
25
19
20
142
112
nC
nC
nC
ns
ns
ns
ns
-1.3
A
-1.2
V
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UTC606P-H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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