Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N65-C
Power MOSFET
2A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N65-C is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.

FEATURES
* RDS(ON) < 5.5Ω @ VGS = 10V, ID =1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL
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QW-R502-B35.B
2N65-C

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N65L-TA3-T
2N65G-TA3-T
2N65L-TF3-T
2N65G-TF3-T
2N65L-TF1-T
2N65G-TF1-T
2N65L-TF2-T
2N65G-TF2-T
2N65L-TF3T-T
2N65G-TF3T-T
2N65L-TM3-T
2N65G-TM3-T
2N65L-TMS-T
2N65G-TMS-T
2N65L-TMS2-T
2N65G-TMS2-T
2N65L-TMS4-T
2N65G-TMS4-T
2N65L-TN3-R
2N65G-TN3-R
2N65L-TND-R
2N65G-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Power MOSFET
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
MARKING
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QW-R502-B35.B
2N65-C

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
Continuous
ID
2.0
A
Drain Current
8.0
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
90
mJ
Avalanche Energy
4.5
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-220
54
W
TO-220F/TO-220F1
23
W
TO-220F3
Power Dissipation
PD
TO-220F2
24
W
TO-251/TO-251S
TO-251S2/TO-251S4
44
W
TO-252/TO-252D
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=45mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ = 25°C
4. ISD≤2A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220/ TO-262
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
UNIT
62.5
°С/W
110
°С/W
2.32
°С/W
5.5
°С/W
5.43
°С/W
2.87
°С/W
θJA
θJC
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2N65-C

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
VDS = 650V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V,
Output Capacitance
COSS
f =1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, ID=1.3A, IG=100μA
Gate-Source Charge
QGS
VGS=10V (Note 1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD (ON)
Turn-On Rise Time
tR
VDS=30V, ID=0.5A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Body Diode Reverse Recovery Time
tRR
IF=2.0A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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0.4
4.6
V
10
μA
100 nA
-100 nA
V/°С
4.0
5.5
V
Ω
240
56
13
pF
pF
pF
13
5.5
2.2
45
45
44
25
nC
nC
nC
ns
ns
ns
ns
1.4
2.0
8.0
285
1.1
V
A
A
ns
nC
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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2N65-C

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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2N65-C
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
300
Drain Current vs. Gate Threshold Voltage
300
200
150
100
200
150
100
50
50
0
0
0
0
150
450
600 750
300
Drain-Source Breakdown Voltage, BVDSS (V)
1.2
Drain Current, ID (A)
1.0
VGS=10V, ID=1A
0.8
0.6
0.4
0.2
0
0
0.7 1.4
2.1 2.8 3.5 4.2
Drain to Source Voltage, VDS (V)
Body-Diode Continuous Current, IS (A)
Drain-Source On-State Resistance
Characteristics
2.4
0.6
1.8 2.4 3.0 3.6
1.2
Gate Threshold Voltage, VTH (V)
Body-Diode Continuous Current vs.
Source to Drain Voltage
2.0
1.6
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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