UNISONIC TECHNOLOGIES CO., LTD UTT75N03 POWER MOSFET 75A, 30V, N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT75N03 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching and a minimum on-state resistance. The UTC UTT75N03 is suitable for low voltage applications such as DC/DC converters. FEATURES * RDS(ON)<4mΩ @ VGS=10V, ID=40A RDS(ON)<7mΩ @ VGS=4.5V, ID=30A * Low on-resistance SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT75N03L-TN3-R UTT75N03G-TN3-R UTT75N03L-TND-R UTT75N03G-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R205-046.B UTT75N03 POWER MOSFET ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V VGS=10V, TC=25°C 75 A ID Continuous (Note 4) Drain Current VGS=10V, TC=100°C 56 A Pulsed (Note 1) IDM 300 A TC=25°C 50 W Total Power Dissipation PD TA=25°C 2 W Operating Junction Temperature Range TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCE PARAMETER Junction to Ambient (PCB Mount) (Note 3) Junction to Case SYMBOL θJA θJC RATINGS 62.5 2.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=30V, VGS=0V Forward VGS=20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS VGS=10V, ID=40A Static Drain-Source On-State Resistance RDS(ON) (Note 2) VGS=4.5V, ID=30A Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS Gate Resistance RG f=1.0MHz SWITCHING PARAMETERS Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDS=15V, ID=0.25A, RG=25Ω VGS=10V Turn-OFF Delay Time tD(OFF) Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Forward On Voltage (Note 2) VSD IS=40A, VGS=0V Notes: 1. Pulse width limited by max. junction temperature 2. Pulse test 3. Surface mounted on 1 in2 copper pad of FR4 board 4. Package limitation current is 75A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 30 1 10 +100 -100 V µA nA nA 4 7 3 mΩ mΩ V 3900 640 510 1.5 pF pF pF Ω 78 140 1100 530 ns ns ns ns 1.2 V 2 of 4 QW-R205-046.B UTT75N03 POWER MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R205-046.B UTT75N03 POWER MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Continuous Drain-Source Current, ISD (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R205-046.B