Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT75N03
POWER MOSFET
75A, 30V, N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET

DESCRIPTION
The UTC UTT75N03 is an N-channel enhancement mode
Power MOSFET, it uses UTC’s advanced technology to provide the
customers with high switching and a minimum on-state resistance.
The UTC UTT75N03 is suitable for low voltage applications
such as DC/DC converters.

FEATURES
* RDS(ON)<4mΩ @ VGS=10V, ID=40A
RDS(ON)<7mΩ @ VGS=4.5V, ID=30A
* Low on-resistance

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT75N03L-TN3-R
UTT75N03G-TN3-R
UTT75N03L-TND-R
UTT75N03G-TND-R
Note: Pin Assignment: G: Gate
D: Drain S: Source

Package
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tape Reel
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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UTT75N03

POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
VGS=10V, TC=25°C
75
A
ID
Continuous (Note 4)
Drain Current
VGS=10V, TC=100°C
56
A
Pulsed (Note 1)
IDM
300
A
TC=25°C
50
W
Total Power Dissipation
PD
TA=25°C
2
W
Operating Junction Temperature Range
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCE
PARAMETER
Junction to Ambient (PCB Mount) (Note 3)
Junction to Case

SYMBOL
θJA
θJC
RATINGS
62.5
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
Forward
VGS=20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
VGS=10V, ID=40A
Static Drain-Source On-State Resistance
RDS(ON)
(Note 2)
VGS=4.5V, ID=30A
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
Rise Time
tR
VDS=15V, ID=0.25A, RG=25Ω
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 2)
VSD
IS=40A, VGS=0V
Notes: 1. Pulse width limited by max. junction temperature
2. Pulse test
3. Surface mounted on 1 in2 copper pad of FR4 board
4. Package limitation current is 75A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
30
1
10
+100
-100
V
µA
nA
nA
4
7
3
mΩ
mΩ
V
3900
640
510
1.5
pF
pF
pF
Ω
78
140
1100
530
ns
ns
ns
ns
1.2
V
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
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT75N03
POWER MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Continuous Drain-Source Current, ISD (A)
Drain Current, ID (µA)
Drain Current, ID (µA)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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