UNISONIC TECHNOLOGIES CO., LTD 1N50K-TA Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50K-TA is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 1N50K-TA is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. FEATURES * RDS(ON)< 6.0Ω @ VGS=10V, ID=0.65A * High Switching Speed * 100% Avalanche Tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N50KG-AA3-T 1N50KL-TM3-T 1N50KG-TM3-T 1N50KL-x-T92-B 1N50KG-x-T92-B 1N50KL-x-T92-K 1N50KG-x-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package SOT-223 TO-251 TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tape Reel Tube Tape Box Bulk 1 of 7 QW-R205-048.C 1N50K-TA Power MOSFET MARKING PACKAGE MARKING SOT-223 TO-251 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-048.C 1N50K-TA Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER RATINGS UNIT 500 V ±30 V Continuous (TC=25°C) 1.3 (Note 2) A Drain Current Pulsed (Note 3) 5 (Note 2) A Avalanche Current (Note 3) 1.3 A Single Pulsed (Note 4) 35 mJ Avalanche Energy 2.6 mJ Repetitive (Note 5) SOT-223 1 W TO-251 Power Dissipation 25 W TO-92 1.56 W PD SOT-223 125 W/°C Derate above 25°C TO-251 0.2 W/°C TO-92 0.0125 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 41mH, IAS = 1.3A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 5. ISD ≤ 1.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS ID IDM IAR EAS EAR THERMAL RESISTANCES CHARACTERISTICS Junction to Ambient Junction to Case PARAMETER SOT-223 TO-251 TO-92 SOT-223 TO-251 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 150 110 140 125 5 80 UNIT °C/W °C/W °C/W °C/W °C/W °C/W 3 of 7 QW-R205-048.C 1N50K-TA Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.65A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω Rise Time tR (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=1.3A, VGS=0V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 V 1 µA +100 nA -100 nA 3.0 5.0 6 5 180 30 12.5 11 2.5 1 37.5 20 53 12 V Ω pF pF pF 15 nC nC nC ns ns ns ns 1.3 5.2 1.2 A A V 4 of 7 QW-R205-048.C 1N50K-TA Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 7 QW-R205-048.C 1N50K-TA Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R205-048.C 1N50K-TA Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 50 0 150 100 50 0 200 400 600 800 0 0 1000 1 2 3 4 6 5 Gate Threshold Voltage, VTH (V) Drain-Source On-State Resistance Characteristics Body-Diode Continuous Current vs. Source to Drain Voltage Body-Diode Continuous Current, IS (A) Drain-Source Breakdown Voltage, BVDSS (V) 0.8 VGS=10V, ID=0.65A Drain Current, ID (A) 200 0.6 0.4 0.2 0 0 1 2 3 4 5 Drain to Source Voltage, VDS (V) 1.8 1.5 1.2 0.9 0.6 0.3 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-048.C