Si4164DY Datasheet

New Product
Si4164DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0032 at VGS = 10 V
30
0.0039 at VGS = 4.5 V
26.3
VDS (V)
30
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
Qg (Typ.)
26.5 nC
RoHS
COMPLIANT
APPLICATIONS
• DC/DC Conversion
- Low-Side Switch
• Notebook PC
• Gaming
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
S
Ordering Information: Si4164DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Single Pulse Avalanche Current
Avalanche Energy
ID
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Unit
V
21.5b, c
17.1b, c
70
5.4
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 20
30
22.6
A
2.7b, c
40
mJ
80
6.0
3.3
PD
3.0b, c
1.9b, c
- 55 to 150
TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
33
16
Maximum
42
21
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 68870
S-82015-Rev. A, 01-Sep-08
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1
New Product
Si4164DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 1 mA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
V
27
ID = 250 µA
mV/°C
- 5.6
VGS(th)
VDS = VGS , ID = 250 µA
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
1.2
30
µA
A
VGS = 10 V, ID = 15 A
0.0026
0.0032
VGS = 4.5 V, ID = 10 A
0.0032
0.0039
VDS = 15 V, ID = 15 A
75
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
3545
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
nC
7.3
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
0.2
1.1
2.2
35
60
16
30
85
16
30
td(on)
18
35
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
95
40
48
td(off)
Turn-Off Delay Time
62
26.5
tf
tr
Rise Time
pF
8.5
VDS = 15 V, VGS = 4.5 V, ID = 10 A
td(on)
Turn-On Delay Time
650
240
8
16
41
75
8
18
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
5.4
ISM
VSD
70
IS = 3 A
0.72
1.1
A
V
Body Diode Reverse Recovery Time
trr
33
65
ns
Body Diode Reverse Recovery Charge
Qrr
27
54
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
17
16
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68870
S-82015-Rev. A, 01-Sep-08
New Product
Si4164DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
70
VGS = 10 thru 4 V
8
VGS = 3 V
I D - Drain Current (A)
I D - Drain Current (A)
56
42
28
6
4
TC = 25 °C
2
14
TC = 125 °C
0.5
1.0
1.5
2.0
0
2.5
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4500
0.0040
3600
VGS = 4.5 V
0.0035
0.0030
VGS = 10 V
900
0.0020
0
28
42
56
Ciss
1800
0.0025
14
5
2700
Coss
Crss
0
70
6
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.8
10
ID = 15 A
ID = 10 A
1.6
VDS = 15 V
VDS = 10 V
6
VDS = 20 V
4
2
VGS = 10 V
1.4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1
VDS - Drain-to-Source Voltage (V)
0.0045
0
TC = - 55 °C
0
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
1.2
VGS = 4.5 V
1.0
0.8
0
0
13
26
39
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68870
S-82015-Rev. A, 01-Sep-08
52
65
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si4164DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.025
100
ID = 15 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.020
0.015
0.010
TJ = 125 °C
0.01
0.005
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
TJ = 25 °C
0
1.2
1
VSD - Source-to-Drain Voltage (V)
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
200
0.4
0.2
160
0.0
Power (W)
VGS(th) Variance (V)
2
- 0.2
ID = 5 mA
120
80
- 0.4
ID = 250 µA
40
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
1
10
100
I D - Drain Current (A)
Limited by R DS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
DC
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68870
S-82015-Rev. A, 01-Sep-08
New Product
Si4164DY
Vishay Siliconix
35
7.5
28
6.0
21
4.5
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
14
7
3.0
1.5
0
0.0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Foot
2.0
Power (W)
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68870
S-82015-Rev. A, 01-Sep-08
www.vishay.com
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New Product
Si4164DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10 -2
10-1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68870.
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Document Number: 68870
S-82015-Rev. A, 01-Sep-08
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000