Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT8P03-H
Power MOSFET
-8A, -30V, P-CHANNEL MOSFET

DESCRIPTION
The UTC UTT8P03-H is a P-channel MOSFET. it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, high switching speed and low gate charge.
The UTC UTT8P03-H is suitable for load switching.

FEATURES
* RDS(ON) ≤ 26mΩ @ VGS=-10V, ID=-8A
RDS(ON) ≤ 34mΩ @ VGS=-4.5V, ID=-7A
* High switching speed
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UTT8P03G-K08-3020-R
Pin Assignment: D: Drain
Package
G: Gate
DFN-8(3×2)
S: Source
1
D
2
D
Pin Assignment
3
4
5
6
D G S D
7
D
8
D
Packing
Tape Reel
MARKING
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UTT8P03-H

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
RATINGS
UNIT
-30
V
±20
V
TC=25°C
-8
A
Continuous
ID
Drain Current
TC=70°C
-6
A
Pulsed (Note 3)
IDM
-60
A
Power Dissipation (Note2)
PD
3
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C
Drain-Source Voltage
Gate-Source Voltage

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
90
40
UNIT
°C/W
°C/W
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UTT8P03-H
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
MIN
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
VDS=-30V, VGS=0V, TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
-30
VDS=VGS, ID=-250µA
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-7A
VGS=-10V, VDS=-5V
-0.8
TYP MAX UNIT
-1
-5
+10
-10
-1.3
21
27
-1.8
26
34
V
µA
µA
uA
uA
V
mΩ
mΩ
A
On State Drain Current
ID(ON)
-60
DYNAMIC PARAMETERS
Input Capacitance
CISS
930
pF
VGS=0V, VDS=-15V, f=1.0MHz
Output Capacitance
COSS
170
pF
Reverse Transfer Capacitance
CRSS
120
pF
Gate Resistance
RG
VGS=0V, VDS=0V, f=1MHz
8
Ω
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
QG
11
17
nC
VGS=-4.5V, VDS=-15V, ID=-5A
Gate to Source Charge
QGS
3.4
nC
Gate to Drain Charge
QGD
4.2
nC
Turn-ON Delay Time
tD(ON)
5.8
11
ns
Rise Time
tR
18.8 36
ns
VDS=-1 5V, VGS=-10V,
RGEN=6Ω, ID=-1A
Turn-OFF Delay Time
tD(OFF)
46.9 90
ns
Fall-Time
tF
12.3 23
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-8.5
A
Maximum Body-Diode Pulsed Current
ISm
-17
A
Drain-Source Diode Forward Voltage
VSD
IS=-1A, VGS=0V
-0.74 -1
V
Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The value in any given application depends on the user's specific board
design.
2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C
4. The θJA is the sum of the thermal impedance from junction to lead θJL and lead to ambient
5. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max
6. These curves are based on the junction-to-ambient thermal impedance which is measured with the device
mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of
TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
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UTT8P03-H
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
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tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UTT8P03-H
On-Resistance, RDS(ON) (mΩ)
Normalized On-Resistance, RDS(ON)
Drain Current, -ID (A)
Drain-Source Current, -ID (A)
TYPICAL CHARACTERISTICS
Figure 5. On-Resistance vs. Gate-Source
Voltage (Note 5)
70
ID=-8A
60
50
40
125°C
30
25°C
20
10
Figure 6. Body-Diode Characteristics
(Note 5)
1.0E+0.2
Reverse Drain Current, -IS (A)
On-Resistance, RDS(ON) (mΩ)

Power MOSFET
1.0E+0.1
1.0E+0.0
125°C
1.0E-0.1
1.0E-0.2
25°C
1.0E-0.3
1.0E-0.4
1.0E-0.5
0
4
6
8
Gate-Source Voltage, -VGS (V)
10
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0
25
50
75
100 125 150 175
Body Diode Forward Voltage -VSD (V)
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Normalized Transient Thermal
Resistance, ZθJA
Drain Current, ID (A)
Capacitance (pF)
s
UNISONIC TECHNOLOGIES CO., LTD
0m
10
Power (W)

s
m
10
Normalized Transient Thermal
Resistance, ZθJA
UTT8P03-H
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
QW-R210-006.A
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UTT8P03-H
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R210-006.A
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