Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT7422-H
Preliminary
Power MOSFET
40A, 30V N-CHANNEL
MOSFET

DESCRIPTION
The UTC UT7422-H is an N-channel MOSFET, it uses
UTC’s advanced technology to provide the customers with a
minimum on state resistance, etc.
The UTC UT7422-H is suitable for load switch and battery
protection applications.

FEATURES
* RDS(ON) < 4.3mΩ @ VGS=10V, ID=20A
RDS(ON) < 6.0mΩ @ VGS=4.5V, ID=16A
* Low RDS(ON)

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
UT7422G-K08-3030-R
Pin Assignment: G: Gate
D: Drain
UT7422G-K08-3030-R
Package
DFN-8(3×3)
S: Source
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) K08-3030: DFN-8(3×3)
(3)Green Package
(3) G: Halogen Free and Lead Free
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Copyright © 2015 Unisonic Technologies Co., Ltd
8
D
Packing
Tape Reel
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QW-R502-B36.a
UT7422-H

Preliminary
Power MOSFET
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) TC=25°C
ID
40
A
Pulsed Drain Current (Note 4)
IDM
200
A
Continuous Drain Current
TA=25°C
IDSM
20
A
Avalanche Current (Note 4)
IAS, IAR
45
A
Avalanche Energy L=0.1mH (Note 4)
EAS, EAR
101
mJ
Power Dissipation (Note 3)
TC=25°C
PD
36
W
Power Dissipation (Note 2)
TA=25°C
PDSM
3.1
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum
allowed junction temperature of 150°C. The value in any given application depends on the user's specific
board design, and the maximum temperature of 150°C may be used if the PCB allows it.
3. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more
useful in setting the upper dissipation limit for cases where additional heatsinking is used.
4. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C.
5. The θJA is the sum of the thermal impedence from junction to case θJC and case to ambient.
6. The maximum current rating is package limited.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 2, 5)
Junction-to-Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
RATINGS
75
3.4
UNIT
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
IGSS
Static Drain-Source On-State Resistance
VGS(TH)
ID(ON)
RDS(ON)
TEST CONDITIONS
MIN
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VDS=30V, VGS=0V, TJ=55°C
VGS=±20V, VDS=0V
30
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=10V, ID=20A, TJ=125°C
VGS=4.5V, ID=16A
VDS=5V, ID=20A
1.3
200
TYP
MAX UNIT
1
5
100
1.85
2.4
3.5
5.5
4.5
85
4.3
6.8
6
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
1950 2445 2940
Output Capacitance
COSS
VGS=0V, VDS=15V, f=1.0MHz
270 390 510
Reverse Transfer Capacitance
CRSS
130 220 310
Gate Resistance
RG
VDS=0V, VGS=0V, f=1.0MHz
1.2
2.4
3.6
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=15V, ID=20A
32
41
50
Total Gate Charge
QG
15
19
24
Gate to Source Charge
QGS
VGS=4.5V, VDS=15V, ID=20A
7.2
Gate to Drain Charge
QGD
6.6
7
Turn-ON Delay Time
tD(ON)
Rise Time
tR
5
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
Turn-OFF Delay Time
tD(OFF)
41.5
Fall-Time
tF
10.5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A,VGS=0V
0.7
1
Maximum Body-Diode Continuous
IS
40
Current (Note)
17.5
22
Body Diode Reverse Recovery Time
trr
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Qrr
31
40
Note: The maximum current rating is package limited.
UNISONIC TECHNOLOGIES CO., LTD
V
µA
µA
nA
V
A
mΩ
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V
A
ns
nC
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UT7422-H

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
VGS
90%
RL
VGS
VDS
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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