Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT7317
Power MOSFET
DUAL N-CHANNEL
ENHANCEMENT MODE
FEATURES

* 30V/6A
* Low RDS(ON)
* Reliable and Rugged
SOP-8
SYMBOL

(7) (8)
D1
(4)
G2
(2)
G1
S2
(3)
S1
(1)

(5) (6)
D2
ORDERING INFORMATION
Ordering Number
Note:

UT7317G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
1
S
2
G
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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QW-R502-141.B
UT7317

Power MOSFET
PIN CONFIGURATION
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UT7317

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (Note 3)
ID
6
A
Pulsed Drain Current (Note 3)
IDM
24
Power Dissipation
PD
2.5
W
Maximum Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient (Note3)

SYMBOL
θJA
MIN
TYP
MAX
50
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH)
VDS=VGS, ID=250uA
VGS=10V, ID=3.5A
VGS=4.5V, ID=2A
1
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=25V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
Turn-ON Rise Time
tR
VDD=15V, VGS=10V, ID=2A,
RG=6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
Gate-Source Charge
QGS
VDS=15V, VGS=10V, ID=10A
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=2A, VGS=0V
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
2
3. Surface Mounted on 1in pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
1.5
21
27
MAX UNIT
1
±100
V
uA
nA
2
28
42
V
mΩ
mΩ
1200
210
95
pF
pF
pF
11
17
37
20
30
5.8
3.8
22
33
68
38
36
ns
ns
ns
ns
nC
nC
nC
0.7
1.3
V
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UT7317

Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
40
30
VGS=4,4.5,6,8,10V
25
Drain Current,IDS (A)
Drain Current,IDS (A)
30
20
15
VGS=3.5V
10
VGS=3V
5
20
TJ=25℃
TJ=125℃
10
TJ=-55℃
VGS=2.5V
0
0
0
1
2
3
4
5
6
7
8
9
10
1.0
Drain-to-Source Voltage,VDS (V)
1.5
2.0
2.5
3.0
3.5
4.0
On-Resistance,RDS(ON) (Ω)
On-Resistance,RDS(ON) (Ω)
Gate-to-Source Voltage,VGS (V)
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Source Current,ISD (A)
100
Single Pulse Power
Source-Drain Diode Forward Voltage
80
60
10
TJ=125℃
1
Power (W)

TJ=-55℃
20
TJ=25℃
0.1
0.2 0.4 0.6 0.8 1.0 1.2
Source to Drain Voltage,VSD (V)
1.4
0
0.01
0.1
1
Time (sec)
10
Normalized Effective Transient
Thermal Impedance
0.0
40
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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