Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6N40K-TA
Power MOSFET
6A, 400V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 6N40K-TA is an N-Channel enhancement mode
power MOSFET using UTC’s perfect planar stripe, DMOS
technology to provide customers with superior switching
performance and minimum on-state resistance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 6N40K-TA is generally used in applications , such as
electronic lamp ballasts based on half bridge topology and high
efficiency switched mode power supplies.

FEATURES
* RDS(ON)<0.6Ω @ VGS=10V, ID=3A
* Fast switching speed
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
6N40KL-TA3-T
6N40KG-TA3-T
TO-220
6N40KL-TF1-T
6N40KG-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate D: Drain S: Source
1
G
G
Pin Assignment
2
3
D
S
D
S
Packing
Tube
Tube
6N40KL-TA3-T

(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220, TF1: TO-220F1
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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6N40K-TA

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
6
A
6 (Note 5)
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
24(Note 5)
A
240
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
8.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
73
Power Dissipation
PD
W
TO-220F1
38
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=13.5mH, IAS=6A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤6A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-220F1
TO-220
Junction to Case
TO-220F1
SYMBOL
θJA
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θJC
RATINGS
62.5
1.71
3.31
UNIT
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
TEST CONDITIONS
VGS=0V, ID=250µA
ID=250μA,
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ
Referenced to 25°C
VDS=400V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=320V, TJ=125°C
Forward
VDS=0V ,VGS=+30V
Gate-Source Leakage Current
IGSS
Reverse
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate-Source Charge
QGS
(Note 1,2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
VGS=10V (Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =6A, VGS=0V
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=6A, VR=50V
dIF/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
MAX UNIT
400
V
0.54
2.0
V/°C
1
10
+100
-100
µA
µA
nA
nA
4.0
0.6
V
Ω
490
95
8.4
pF
pF
pF
65
6.2
8.8
60
65
105
44
nC
nC
nC
ns
ns
ns
ns
6
24
1.4
300
1.75
A
A
V
ns
μC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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