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Analog Power
AM1922NE
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
88 @ VGS = 4.5V
20
120 @ VGS = 2.5V
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
D1
SC70-6
Top View
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe S1
SC70-6 saves board space
G1
Fast switching speed
D2
High performance trench technology
ID (A)
1.6
1.3
1
6
D1
2
3
5
4
G2
S2
D2
G2
G1
S2
S1
N-Channel MOSFET N-Channel MOSFET
ESD
Protected
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol Maximum Units
VDS
20
V
VGS
8
o
TA=25 C
a
Continuous Drain Current
o
ID
TA=70 C
b
IDM
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
IS
o
TA=25 C
a
Power Dissipation
o
PD
TA=70 C
1.6
A
1.3
5
0.4
A
0.3
W
0.21
o
C
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
Maximum Junction-to-Ambient
a
t <= 5 sec
Steady-State
RTHJA
415
460
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM1922NE_A
Analog Power
AM1922NE
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±8 V
VDS = 16 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain CurrentA
ID(on)
Drain-Source On-ResistanceA
gfs
VSD
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
0.3
±25
1
VDS = 16 V, VGS = 0 V, TJ = 55oC
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 0.3 A
VGS = 2.5 V, ID = 0.2 A
rDS(on)
Forward TranconductanceA
Diode Forward Voltage
Min
Limits
Typ
Max
2
8
1.1
VDS = 10 V, VGS = 5 V, ID = 0.3 A
ID =
1
0.4
0.6
7
14
25
10
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential
or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products
are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal
injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall
indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an
Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
V
uA
uA
A
88
120
VDS = 4.5 V, ID = 0.3 A
IS = 0.2 A, VGS = 0 V
VDD = 10 V, RL = 30 Ω,
0.3 A, VGEN = 10 V
5
Unit
Publication Order Number:
DS-AM1922NE_A
mΩ
S
V
nC
ns
Analog Power
AM1922NE
Package Information
SC-70: 6LEAD
3
PRELIMINARY
Publication Order Number:
DS-AM1922NE_A