Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT4610-H
Power MOSFET
73A,100V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UT4610-H is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UT4610-H is suitable for high efficiency synchronous
rectification in SMPS, hard switched and high frequency circuits.

FEATURES
* RDS(ON)<14mΩ @ VGS=10V, ID=44A
* High switching speed

SYMBOL
D (2)
G (1)
S (3)

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT4610L-TA3-T
UT4610G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source

Package
TO-220
1
G
Pin Assignment
2
3
D
S
Packing
Tube
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
RATINGS
UNIT
100
V
±20
V
73
TC=25°C
Continuous
A
ID
(VGS @ 10V)
Drain Current
TC=100°C
52
Pulsed (Note 4)
IDM
290
A
Single Pulsed Avalanche Energy (Note 2)
EAS
235
mJ
Power Dissipation
TC=25°C
PD
190
W
Linear Derating Factor
1.3
W/°C
Peak Diode Recovery (Note 3)
dV/dt
7.6
V/ns
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Limited by TJmax, starting TJ=25°C, L=0.39mH, RG=25Ω, IAS=44A, VGS=10V. Part not recommended for use
above this value.
3. ISD≤44A, di/dt≤660A/µs, VDD≤V(BR)DSS, TJ≤175°C
4. Pulse width ≤400µs; duty cycle ≤ 2%
Drain-Source Voltage
Gate-Source Voltage

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
Note: Rθ is measured at TJ approximately 90°C

SYMBOL
θJA
θJC
RATINGS
62
0.77
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise spcified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
TEST CONDITIONS
ID=250µA, VGS=0V
Reference to 25°C, ID=1mA
△BVDSS/△TJ
(Note 1)
VDS=100V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V, TJ=125°C
Forward
VGS=+20V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=100µA
Static Drain-Source On-State
RDS(ON)
VGS=10V, ID=44A (Note 2)
Resistance
Forward Transconductance
gFS
VDS=50V, ID=44A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=50V, f=1MHz
Reverse Transfer Capacitance
CRSS
UNISONIC TECHNOLOGIES CO., LTD
MIN
TYP MAX UNIT
100
V
0.085
2.0
11
73
V/°C
20
250
200
-200
µA
µA
nA
nA
4.0
V
14
mΩ
S
3200
368
220
pF
pF
pF
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UT4610-H

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise spcified)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate to Source Charge
QGS
VGS=10V, VDS=50V, ID=1.3A
Gate to Drain Charge
QGD
Gate Resistance
RG
f=1MHz open drain
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, VGS=10V,
RG=25Ω (Note 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
MOSFET symbol showing the
Maximum Body-Diode Continuous
IS
integral reverse
Current
p-n junction diode.
MIN
TYP MAX UNIT
730
126
288
1.1
110
160
560
200
nC
nC
nC
Ω
ns
ns
ns
ns
73
A
290
A
1.3
V
D
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
G
S
Drain-Source Diode Forward Voltage
VSD
IS=44A, VGS=0V, TJ=25°C (Note 2)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature
2. Pulse width ≤400µs; duty cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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UT4610-H

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UT4610-H
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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UT4610-H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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