Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTD02R075
Power MOSFET
15A, 20V N-CHANNEL POWER
MOSFET

DESCRIPTION
The UTC UTD02R075 is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with high switching
speed, a minimum on-state resistance and low gate charge, etc.
The UTC UTD02R075 is suitable for DC-DC converters, load
switch and battery protection.

FEATURES
* RDS(on) < 7.5 mΩ @ VGS=4.5V, ID=15A
RDS(on) < 10 mΩ @ VGS=2.5 V, ID=12A
* High switching speed
* Low gate charge

SYMBOL
Drain (5, 6, 7, 8)
Gate (1, 3)
Source (2, 4)

ORDERING INFORMATION
Ordering Number
Note:

UTD02R075G-S08-R
Pin Assignment: G: Gate
D: Drain
Package
SOP-8
S: Source
1
S
2
S
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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QW-R209-036.a
UTD02R075

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous (Note a)
ID
15
A
Drain Current
Pulsed
IDM
50
A
Power Dissipation (Note a)
PD
2.5
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note a)
θJA
50
°C/W
Junction to Case (Note)
θJC
25
°C/W
Note: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is
determined by the user's board design.
a) 50°C/W when mounted on a 0.5 in2 pad of 2 oz copper.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-State Resistance
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
Reference to 25°C,
△BVDSS/△TJ
ID=250µA
IDSS
VDS=16V, VGS=0V
VGS=8V, VDS=0V
IGSS
VGS=-8V, VDS=0V
VGS(TH)
∆VGS(TH)/∆TJ
RDS(ON)
VDS=VGS, ID=250µA
ID = 250 µA, Referenced to
25°C
VGS=4.5V, ID=15A
VGS=4.5V, ID=15A,
TJ=125°C
VGS=2.5V, ID=12A
VGS=4.5V, VDS=-5V
On State Drain Current
ID(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=10V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note)
Total Gate Charge
QG
Gate to Source Charge
QGS
VGS=5V, VDS=10V, ID=15A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=10V, ID=1A, RGEN=6Ω,
VGS=4.5V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Drain-Source Diode Forward Voltage
VSD
IS=2.1A, VGS=0V (Note)
UNISONIC TECHNOLOGIES CO., LTD
MIN
TYP
MAX
20
V
29
0.4
UNIT
0.9
mV/°C
1
+100
-100
µA
nA
nA
1.5
V
mV/℃
-4
6
7.5
mΩ
9
13
mΩ
8
10
mΩ
A
25
4700
850
310
pF
pF
pF
47
7
10.5
20
27
95
35
66
32
44
133
56
nC
nC
nC
ns
ns
ns
ns
0.65
2.1
1.2
A
V
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QW-R209-036.a
UTD02R075
Preliminary
Power MOSFET
Note: Pulse Test: Pulse Width≤300us, Duty Cycle ≤ 2.0%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-036.a
UTD02R075
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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UTD02R075
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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