Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N70K-MTQ
Preliminary
Power MOSFET
7A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 7N70K-MTQ is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.

FEATURES
* RDS(ON) < 1.7Ω @ VGS = 10V, ID = 3.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL
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7N70K-MTQ

Preliminary
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N70KL-TF3-T
7N70KG-TF3-T
7N70KL-TF1-T
7N70KG-TF1-T
7N70KL-TF2-T
7N70KG-TF2-T
7N70KL-TM3-T
7N70KG-TM3-T
7N70KL-TMS-T
7N70KG-TMS-T
7N70KL-TMS2-T
7N70KG-TMS2-T
7N70KL-TMS4-T
7N70KG-TMS4-T
7N70KL-TN3-R
7N70KG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Power MOSFET
Package
TO-220F
TO-220F1
TO-220F2
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
MARKING
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7N70K-MTQ

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25°C
TC = 100°C
ID
RATINGS
700
±30
7.0
4.7
28
330
14.2
4.5
UNIT
V
V
A
A
A
mJ
mJ
V/ns
RATINGS
UNIT
62.5
°C/W
110
°C/W
2.6
2.5
°C/W
°C/W
2.2
°C/W
Drain Current Pulsed (Note 2)
IDM
Avalanche Energy, Single Pulsed (Note 3)
EAS
Avalanche Energy, Repetitive, Limited by TJMAX
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
TO-220F/TO-220F1
48
W
TO-220F2
PD
Power Dissipation (TC = 25°C)
TO-251/TO-251S
TO-251S2/TO-251S4
57
W
TO-252
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=13.5mH, IAS=7.0A, VDD=50V, RG=0 Ω, Starting TJ=25°C
4. ISD ≤ 7.0A, di/dt ≤100A/μs, VDD ≤ BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220F/TO-220F1
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252
TO-220F/TO-220F1
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
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7N70K-MTQ

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
VGS = 0V, ID = 250μA
VDS = 700V, VGS = 0V
Drain-Source Leakage Current
IDSS
VDS = 560V, TC = 125°C
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
ID = 250mA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Drain-Source ON-State Resistance
RDS(ON)
VGS = 10V, ID = 3.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-on Delay Time
tD(ON)
Turn-on Rise Time
tR
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-off Delay Time
tD(OFF)
Turn-off Fall Time
tF
Total Gate Charge
QG
VDS= 50V,ID= 1.3A,
Gate-Source Charge
QGS
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QDD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS =7.0A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS = 7.0A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
700
BVDSS
UNISONIC TECHNOLOGIES CO., LTD
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TYP MAX UNIT
1
100
100
-100
0.67
2.5
V
μA
μA
nA
nA
V/°C
4.5
1.7
V
Ω
480
80
6.5
pF
pF
pF
57
60
128
52
21.8
6.8
4.8
ns
ns
ns
ns
nC
nC
nC
320
2.4
1.4
V
7.0
A
28
A
ns
μC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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7N70K-MTQ

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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