Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD4509-H
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)

DESCRIPTION
The UTC UD4509-H is an N & P-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers with a
minimum on-state resistance, high switching speed and low gate
charge.
The UTC UD4509-H is suitable for low voltage applications such
as DC/DC converters.

SOP-8
FEATURES
* N-channel:
RDS(on) < 10mΩ @ VGS=10 V, ID=10A
* P-channel:
RDS(on) < 21mΩ @ VGS=-10 V, ID=-7A
* High switching speed
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UD4509G-S08-R
Pin Assignment: S: Source
Pin Assignment
1 2 3 4 5 6 7 8
SOP-8
S1 G1 S2 G2 D1 D1 D2 D2
G: Gate
D: Drain
Package
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UD4509-H

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
RATINGS
UNIT
N-channel
P-channe
Drain-Source Voltage
VDSS
30
-30
V
Gate-Source Voltage
VGSS
±20
±20
V
Continuous
TA=25°C
11.2
-8.0
A
ID
(Note 3)
Drain Current
TA=70
9.0
-6.4
A
Pulsed (Note 1)
IDM
40
-30
A
Power Dissipation
TA=25°C
PD
2
W
Junction Temperature
TJ
-55~150
°C
Storage Temperature
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER

SYMBOL
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
Junction to Ambient (Note 3)
θJA
62.5
Note: Surface mounted on 1 in2 copper pad of FR4 board ; 135 °C/W when mounted on Min. copper pad

UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
N-channel
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 2)
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 2)
Rise Time
Turn-OFF Delay Time
Fall-Time
SOURCE TO DRAIN DIODE SPECIFICATIONS
Drain-Source Diode Forward Voltage (Note 2)
Body Diode Reverse Recovery Time (Note 2)
Body Diode Reverse Recovery Charge
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
gFS
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VSD
tRR
QRR
UNISONIC TECHNOLOGIES CO., LTD
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TEST CONDITIONS
MIN TYP MAX UNIT
ID=250uA, VGS=0V
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
30
VDS=VGS, ID=250uA
VGS=10V, ID=10A
VGS=4.5V, ID=7A
VGS=10V, ID=10A
1
VGS=0V, VDS=25V,
f=1.0MHz
f=1.0MHz
VGS=4.5V, VDS=15V, ID=10A
VDS=15V, VGS=10V, ID=1A,
RG=3.3Ω, RD=15Ω
IS=1.7A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
V
10 µA
+100 nA
-100 nA
3
10
16
20
V
mΩ
mΩ
S
715 1140 pF
220
pF
160
pF
2.2
Ω
12
2.5
7.5
9
6.5
23
9.5
27
18
19.2
nC
nC
nC
ns
ns
ns
ns
1.2
V
ns
nC
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Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
P-channel
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 2)
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Rise Time
tR
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE TO DRAIN DIODE SPECIFICATIONS
Drain-Source Diode Forward Voltage (Note 2)
VSD
Body Diode Reverse Recovery Time (Note 2)
tRR
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by Max. junction temperature
2. Pulse test
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
MIN TYP MAX UNIT
ID=-250uA, VGS=0V
VDS=-24V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
-30
VDS=VGS, ID=-250uA
VGS=-10V, ID=-7A
VGS=-4.5V, ID=-5A
VGS=-10V, ID=-7A
-1
VGS=0V, VDS=-25V,
f=1.0MHz
f=1.0MHz
VGS=-4.5V, VDS=-15V, ID=-7A
VDS=-15V, VGS=-10V, ID=-1A,
RG=3.3Ω, RD=15Ω
IS=-1.7A, VGS=0V
IS=-7A, VGS=0V,
dI/dt=100A/µs
V
-10 µA
+100 nA
-100 nA
-3
21
32
15
V
mΩ
mΩ
S
1260 2000 pF
210
pF
185
pF
5.6
Ω
15
3
8
10.5
6.5
40
29
22
12
24
nC
nC
nC
ns
ns
ns
ns
-1.2
V
ns
nC
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Power MOSFET
TYPICAL CHARACTERISTICS

N-CHANNEL
Drain to Source Voltage vs. Drain Current
40
VG=6V
VG=8V
VG=10V
30
20
0
VG=4V
20
1
2
3
0
4
0
1
Body-Diode Continuous Current, IS(A)
Static Drain-Source On-State Resistance,
RDS(ON) (mΩ)
VG=4.5V
10
VG=10V
0
2
4
6
8
4
10
15
5
3
Forward Characteristic of Reverse Diode
On-Resistance vs. Gate Voltage
20
2
Drain to Source Voltage, VDS(V)
Drain to Source Voltage, VDS(V)
0
TA=150°C
10
10
0
VG=6V
VG=8V
VG=10V
30
VG=4V
Drain Current, ID(A)
Drain Current, ID(A)
Drain to Source Voltage vs. Drain Current
40
TA=25°C
8
6
150°C
25°C
4
2
0
10
0
0.4
Gate to Source Voltage, (V)
0.8
1.2
1.6
2
Source to Drain Voltage, VDS (V)
Safe Operating Area
Transient Thermal Response Curve
1
D=0.5
Operation in This Area is Limited by RDS(on)
2
Thermal Response, θJC (t)
Drain Current, ID (A)
10
100µs
10
10
1ms
1
10ms
DC
0
10-1
100
Notes:
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
0.2
0.1
0.1
0.05
0.02
Notes:
1. θJA (t) = 62.5°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
0.01
0.01
1
10
10
Drain-Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
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Single Pulse
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
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QW-R211-022.B
UD4509-H

Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
N-CHANNEL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-022.B
UD4509-H

Power MOSFET
TYPICAL CHARACTERISTICS
P-CHANNEL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-022.B
UD4509-H

Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
P-CHANNEL
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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QW-R211-022.B
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