datasheet

SKiiP 02NAC12T4V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Inverter - IGBT
VCES
IC
IC
MiniSKiiP® 0
ICRM
VGES
Tj
IF
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Tj = 175 °C
V
6
A
Ts = 70 °C
6
A
Ts = 25 °C
6
A
Ts = 70 °C
ICRM = 3 x ICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• Temperature sensor: No basic
insulation to main circuit, max. potential
difference 850V to -DC
A
A
12
A
-20 ... 20
V
10
µs
-40 ... 175
°C
1200
V
Ts = 25 °C
7.5
A
Ts = 70 °C
7.5
A
Ts = 25 °C
7.5
A
Ts = 70 °C
7.5
A
Tj = 150 °C
IF
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Remarks
6
4
Inverse - Diode
VRRM
Features
Tj = 150 °C
1200
Ts = 25 °C
ICnom
tpsc
SKiiP 02NAC12T4V1
Tj = 25 °C
4
A
12
A
36
A
-40 ... 175
°C
Rectifier - Diode
VRRM
Tj = 25 °C
IF
Ts = 25 °C, Tj = 150 °C
I2t
V
39
A
8
A
tp = 10 ms
sin 180°
Tj = 25 °C
220
A
Tj = 150 °C
200
A
tp = 10 ms
sin 180°
Tj = 25 °C
242
A2s
Tj = 150 °C
200
A2s
-40 ... 150
°C
-40 ... 125
°C
2500
V
IFnom
IFSM
1600
Tj
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
A
Tstg
Visol
AC sinus 50 Hz, 1 min
Characteristics
Symbol
Conditions
Inverter - IGBT
IC = 4 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
rCE
VGE(th)
ICES
Cies
Coes
NAC
© by SEMIKRON
Cres
VGE = 15 V
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
263
300
mΩ
Tj = 150 °C
388
413
mΩ
5.8
6.5
V
Tj = 25 °C
0.1
0.3
mA
f = 1 MHz
0.25
nF
f = 1 MHz
0.03
nF
f = 1 MHz
0.02
nF
VGE = VCE V, IC = 1 mA
VGE = 0 V
VCE = 1200 V
VCE = 25 V
VGE = 0 V
5
mA
Rev. 4 – 03.11.2014
1
SKiiP 02NAC12T4V1
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Inverter - IGBT
QG
- 8 V...+ 15 V
23
RGint
Tj = 25 °C
0
VCC = 600 V
IC = 4 A
RG on = 150 Ω
RG off = 150 Ω
Tj = 150 °C
Ω
td(on)
65
ns
Tj = 150 °C
45
ns
Tj = 150 °C
0.66
mJ
Tj = 150 °C
300
ns
Tj = 150 °C
110
ns
Tj = 150 °C
0.37
mJ
2.49
K/W
tr
Eon
MiniSKiiP® 0
SKiiP 02NAC12T4V1
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
td(off)
tf
Eoff
VGE = +15/-15 V
Rth(j-s)
per IGBT, λpaste=0.8 W/K*m
Inverse - Diode
VF = VEC IF = 4 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
IRRM
Qrr
Err
Rth(j-s)
chiplevel
nC
Tj = 25 °C
1.8
2.1
V
Tj = 150 °C
1.6
1.9
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
129
144
mΩ
181
198
mΩ
Tj = 150 °C
IF = 4 A
Tj = 150 °C
VGE = -15 V
Tj = 150 °C
VCC = 600 V
di/dtoff = 110 A/µs Tj = 150 °C
per Diode, λpaste=0.8 W/K*m
3.4
A
0.95
µC
0.34
mJ
2.53
K/W
Rectifier - Diode
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• Temperature sensor: No basic
insulation to main circuit, max. potential
difference 850V to -DC
VF = VEC
VF0
rF
Rth(j-s)
IF = 8 A
chiplevel
chiplevel
chiplevel
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
0.9
1
V
Tj = 125 °C
0.7
0.8
V
Tj = 25 °C
15
29
mΩ
Tj = 125 °C
21
34
per Diode, λpaste=0.8 W/K*m
1.5
mΩ
K/W
Module
Ms
to heat sink
2
w
2.5
Nm
20
g
1670 ±
3%
Ω
Temperature Sensor
R100
Tr = 100 °C, tolerance = 3 %
2
R(T)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
NAC
2
Rev. 4 – 03.11.2014
© by SEMIKRON
SKiiP 02NAC12T4V1
Fig. 1: Typ. output characteristic
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4 – 03.11.2014
3
SKiiP 02NAC12T4V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. input bridge forward characteristic
4
Rev. 4 – 03.11.2014
© by SEMIKRON
SKiiP 02NAC12T4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 4 – 03.11.2014
5