MZ1.0GM3V9-100 THRU MZ1.0GM100-5

SURFACE MOUNT GLASS PASSIVATED ZENER DIODE
Zener Voltage
MZ1.0GM3V9-100 THRU MZ100-5
3.9 to 100 Volts
Standy State Power
1.0 Watt
GLASS MELE
FEATURES
•
•
Silicon Planar Power Zener Diodes
For use in stabilizing and clipping circuits with higher
Power rating
The Zener voltages are graded according to the
International E24 standard. Smaller voltage tolerances
anc other Zener voltages are available upon request.
•
.102(2.6)
.094(2.4)
0.028(0.60)
0.018(0.46)
.205(5.2)
.189(4.8)
MECHNICAL DATA
•
•
Case: MELF Glass Case
Weight: approx.0.25g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•
Ratings at 25℃ ambient temperature unless otherwise specified
Symbol
Value
Unit
Power Dissipation at Tamb=75℃
Ptot
1.0(1)
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Ts
-55 to ~+150
℃
Zener Current (see Tamb “Characteristics”)
Characteristics at Tamb=25℃
Symbol
Min
Typ
Max
Unit
RthJA
-
-
170(1)
℃/W
Thermal resistance
Junction to Ambient Air
Notes
1.
.
Valid provided that electrodes are kept at ambient temperature.
Web Site: www.hkmic.com
SURFACE MOUNT GLASS PASSIVATED ZENER DIODE
MZ1.0GM3V9-100 THRU MZ100-5
Zener Voltage
3.9 to 100 Volts
Standy State Power
1.0 Watt
ELECTRICAL CHARACTERISTIC
Ratings at 25℃ ambient temperature unless otherwise specified
Temp.coeff.
Dynamic
Zener
of Zener volt
resistance
Valtage(2)
Device
at
at LZT f=1kHz
at IZT
Marking
Type
LZT
max
min.max.
Code
αvz(10-4/K)
VZ(V)
rzj(Ω )
MZ1.0GM3V9
3V9-100
3.7…4.1
-7…+2
4(<7)
MZ1.0GM4V3
4V3-100
4.0…4.6
-7…+3
4(<7)
MZ1.0GM4V7
4V7-100
4.4…5.0
-7…+4
4(<7)
MZ1.0GM5V1
5V1-100
4.8…5.4
-6…+5
2(<5)
MZ1.0GM5V6
5V6-100
5.2…6.0
-3…+5
1(<2)
MZ1.0GM6V2
6V2-100
5.8…6.6
-1…+6
1(<2)
MZ1.0GM6V8
6V8-100
6.4…7.2
0…+7
1(<2)
MZ1.0GM7V5
7V5-100
7.0…7.9
0…+7
1(<2)
MZ1.0GM8V2
8V2-100
7.7…8.7
+3…+8
1(<2)
MZ1.0GM9V1
9V1-50
8.5…9.6
+3…+8
2(<4)
MZ1.0GM10V
10V-50
9.4…10.6
+5…+9
2(<4)
+5…+10
MZ1.0GM11V
11V-50
10.4…11.6
3(<7)
+5…+10
MZ1.0GM12V
12V-50
11.4…12.7
3(<7)
+5…+10
MZ1.0GM13V
13V-50
12.4…14.1
4(<9)
+5…+10
MZ1.0GM15V
15V-50
13.8…15.8
4(<9)
+5…+11
MZ1.0GM 16V
16V-25
15.3…17.1
5(<10)
MZ1.0GM18V
18V-25
16.8…19.1
+7…+11
5(<11)
MZ1.0GM20V
20V-25
18.8…21.2
+7…+11
6(<12)
MZ1.0GM22V
22V-25
20.8…23.3
+7…+11
7(<13)
+7…+12
MZ1.0GM24V
24V-25
22.8…25.6
8(<14)
MZ1.0GM27V
27V-25
25.1…28.9
+7…+12
9(<15)
MZ1.0GM30V
30V-25
28…32
+7…+12
10(<20)
MZ1.0GM33V
33V-25
31…35
+7…+12
11(<20)
MZ1.0GM36V
36V-10
34…38
+7…+12
25(<60)
MZ1.0GM39V
39V-10
37…41
+8…+12
30(<60)
MZ1.0GM43V
43V-10
40…46
+8…+13
35(<80)
MZ1.0GM47V
47V-10
44…50
+8…+13
40(<80)
MZ1.0GM51V
51V-10
48…54
+8…+13
45(<100)
MZ1.0GM56V
56V-10
52…60
+8…+13
50(<100)
MZ1.0GM62V
62V-10
58…66
+8…+13
60(<130)
MZ1.0GM68V
68V-10
64…72
+8…+13
65(<130)
MZ1.0GM75V
75V-10
70…79
+8…+13
70(<160)
MZ1.0GM85V
82V-10
77…88
+8…+13
80(<160)
MZ1.0GM91V
91V-5
85…96
+9…+13
120(<250)
MZ1.0GM100V
100V-5
94…106
+9…+13
130(<250)
Notes:
(1) Valid provided that electrodes are kept at ambient temperature
(2) Tested with pulses tp=5ms
Web Site: www.hkmic.com
Test
current
lZT(mA)
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
Reverse
voltage
at
IR=0.5μA
VR(V)
>0.7
>1.5
>2.0
>3.0
>5.0
>6.0
>7.0
>7.5
>8.5
>9.0
>10
>11
>12
>14
>15
>17
>18
>20
>22.5
>25
>27
>29
>32
>35
>38
>42
>47
>51
>56
>61
>68
>75
Admissible
Zener current(1)
at Tamb=25℃
Iz(mA)
203
182
165
150
135
128
110
100
89
82
74
66
60
55
49
44
40
36
34
29
27
25
22
20
18
17
15
14
13
11
10
9
8
7.5
7
SURFACE MOUNT GLASS PASSIVATED ZENER DIODE
Zener Voltage
MZ1.0GM3V9-100 THRU MZ100-5
3.9 to 100 Volts
Standy State Power
1.0 Watt
RATING AND CHARACTERISTIC CURVES MZ1.0GM3V9-100 THRU MZ1.0GM100-5
Breakdown characteristics
Tj=constant( pulsed )
mA
240
3V9
4V7
200
T j=25℃
5V6
6V8
160
Iz
8V2
120
Test Current Iz
100mA
10V
12V
80
5mA
40
0
0
1
2
3
4
5
6
7
9
8
10
11
12
13
14
15V
Vz
Breakdown characteristics
Tj=constant( pulsed )
mA
60
15V
18V
T j=25℃
22V
50
27V
40
Iz
33V
Test Current Iz
25mA
30
39V
47V
20
10mA
10
0
0
5
10
15
20
25
30
Vz
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35
40
45
50V
SURFACE MOUNT GLASS PASSIVATED ZENER DIODE
Zener Voltage
MZ1.0GM3V9-100 THRU MZ100-5
3.9 to 100 Volts
Standy State Power
1.0 Watt
RATING AND CHARACTERISTIC CURVES MZ1.0GM3V9-100 THRU MZ1.0GM100-5
Breakdown characteristics
Tj=constant( pulsed )
mA
24
TJ =25 ℃
56V
Iz
68V
82V
Test Current Iz
10mA
100V
10
5mA
0
0
50
100
150
200V
Vz
Pulse thermal resistance
versus pulse duration
Admissible power dissipation
versus ambient temperature
Vaild provided that electrodes
are kept at amblent temperature
Vaild provided that electrodes
are kept at amblent temperature
K/W
W
103
1.0
5
4
3
0.8
2
Ptot
rthU
102
0.6
0.5
5
4
3
0.2
2
0.4
0.1
10
0.05
5
4
0.2
2
0
100
200℃
1
tp
0.02
3
0.01
10 -5
Tamb
V=
10 -3
10 -2
10 -1
tp
Web Site: www.hkmic.com
P1
T
v=0
10 -4
tp
T
1
10s
SURFACE MOUNT GLASS PASSIVATED ZENER DIODE
MZ0.5GE2V0-20 THRU MZ0.5GE75V-1.7
MZ0.5GN SERIES
MZ0.5GE2V
THRU MZ0.5GE75V
RATING AND CHARACTERISTIC CURVES MZ1.0GM3V9-100 THRU MZ1.0GM100-5
Dynamic resistance
versus Zener current
Dynamic resistance
versus Zener current
Ω
103
Ω
103
7
5
4
5
3
rzj
4
2
3
5V1
102
rzj
2
4V3
5
4
18V
3
102
7
100V
82V
68V
10
5
56V
5
4
3
12V
2
4
3
1
2
10V
6V2
2
7V5
1
2
3 4 5
7
10
2
100mA
3 4 5
10
0.1
Iz
Dynamic resistance
versus Zener current
Ω
100
7
5
4
3
rzj
2
43V
36V
10
30V
7
24V
22V
5
4
18V
3
2
1
1
2
3 4 5
10
2
3
43V
4 5
100mA
Iz
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2
3
4 5
1
2
Iz
3
4 5
100mA