UNISONIC TECHNOLOGIES CO., LTD UFP254 Power MOSFET 23A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFP254 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON)<140mΩ @ VGS=10V,ID=14A * Low Gate Charge (Maximum 140nC) * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UFP254L-TF2-T UFP254G-TF2-T UFP254L-TF3-T UFP254G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F2 TO-220F 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-822.B UFP254 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 250 V VGSS ±20 V Continuous ID 23 A Drain Current Pulsed IDM 92 A Avalanche Current IAR 23 A Avalanche Energy Single Pulsed EAS 1780 mJ Peak Diode Recovery dv/dt dv/dt 9 V/ns Power Dissipation PD 42 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=250V VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=14A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A , Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, VGS=10V, ID=0.5A, Rise Time tR RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=23A, VGS=0V Reverse Recovery Time trr VGS = 0 V, IS = 10A, dIF / dt = 100 A/µs (Note 1) Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 250 2.0 25 +100 -100 V μA nA nA 4.0 140 V mΩ 2800 380 23 pF pF pF 120 19 21 85 115 780 170 nC nC nC ns ns ns ns 23 92 1.8 212 1.73 A A V ns µC 2 of 3 QW-R502-822.B UFP254 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-822.B