Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BSS127
Power MOSFET
0.021A, 600V ENHANCEMENT
N-CHANNEL MOSFET

DESCRIPTION
The UTC BSS127 is an enhancement N-channel mode Power
FET, it uses UTC’s advanced technology to provide customers ultra
high switching speed and ultra low gate charge.

FEATURES
* RDS(ON) < 600Ω @ VGS= 4.5V, ID=0.016A
RDS(ON) < 500Ω @ VGS=10V, ID=0.016A
* Ultra Low Gate Charge (Typical 140nC)
* Ultra High Switching Speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

BSS127G-AE2-R
BSS127G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
S: Source
MARKING
3
SC7G
2
1
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QW-R502-824.E
BSS127

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
600
V
±20
V
TA=25°C
0.021
A
Continuous
ID
Drain Current
TA=70°C
0.017
A
IDM
0.09
A
Pulsed (TA=25°C)
Peak Diode Recovery dv/dt
dv/dt
6
kV/µs
Power Dissipation (TA=25°C )
PD
0.3
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient

SYMBOL
VDSS
VGSS
SYMBOL
θJA
RATINGS
325
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Forward
Gate-Source Leakage Current
Reverse
SYMBOL
TEST CONDITIONS
MIN
BVDSS
ID=250µA, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VGS=0V, VDS=600V, TJ=25°C
VGS=0V, VDS=600V, TJ=150°C
600
IGSS
Drain-Source Leakage Current
ID(OFF)
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
+100
-100
0.1
10
V
nA
nA
µA
µA
VDS=VGS, ID=8µA
1.4
2.0
2.6
VGS=4.5V, ID=0.016A
330 600
VGS=10V, ID=0.016A
310 500
|VDS|>2|ID|RDS(ON)MAX, ID=0.01A 0.007 0.015
V
Ω
Ω
S
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=0~10V, VDS=300V,
Gate to Source Charge
QGS
ID=0.01A
Gate to Drain Charge
QGD
Gate Plateau Voltage
Vplateau
Turn-ON Delay Time
tD(ON)
VDD=300V, VGS=10V,
Rise Time
tR
ID=0.01A, RG=6Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TA=25°C
Maximum Body-Diode Pulsed Current
ISM
TA=25°C
Drain-Source Diode Forward Voltage
VSD
IF=0.016A, VGS=0V, TJ=25°C
Body Diode Reverse Recovery Time
tRR
VR=300V, IF=0.016A,
dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP MAX UNIT
+10
-10
21
2.4
1.0
28
3
1.5
pF
pF
pF
0.07
0.31
0.65
3.56
6.1
9.7
14
115
0.10
0.5
1.0
19.0
14.5
21
170
nC
nC
nC
V
ns
ns
ns
ns
0.016
0.09
0.82 1.2
160 240
13.2 19.8
A
A
V
ns
µC
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QW-R502-824.E
BSS127

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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QW-R502-824.E
BSS127
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (mA)
Drain Current, ID (mA)
Drain Current, ID (µA)
Drain Current, ID (µA)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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