UNISONIC TECHNOLOGIES CO., LTD UTT6NP10 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION 1 The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UTT6NP10 is universally applied in high-speed switching, motor driver. FEATURES SOP-8 1 TO-252-4 * RDS(on) <150mΩ @VGS = 10V, ID=2A RDS(on) <250mΩ @VGS =5V, ID=1A * RDS(on) <155mΩ @VGS =-10V, ID=-2A RDS(on) <250mΩ @VGS = -5V, ID=-1A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT6NP10L-TN4-R UTT6NP10G- TN4-R TO-252-4 UTT6NP10G- S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Pin Assignment Packing 1 2 3 4 5 6 7 8 S1 G1 D S2 G2 - - Tape Reel S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel 1 of 7 QW-R502-772.E UTT6NP10 Power MOSFET MARKING TO-252-4 SOP-8 PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-772.E UTT6NP10 Power MOSFET ABSOLUTE MAXIMUM RATINGS(TA=25°С, unless otherwise specified) RATINGS UNIT N-CHANNEL P-CHANNEL Drain-Source Voltage VDSS 100 -100 V Gate-Source Voltage VGSS ±20 ±20 V 3.1 -3.2 A Continuous TA=25°C ID (Note 3) Drain Current TA=70°C 2.5 -2.5 A Pulsed (Note 1) IDM 12.4 -12.8 A TO-252-4 3.1 W Power Dissipation (TA=25°C) PD SOP-8 2 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER SYMBOL THERMAL DATA PARAMETER Junction to Ambient SYMBOL TO-252-4 SOP-8 θJA RATINGS 40 62.5 UNIT C/W C/W ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) N-channel PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V Forward VGS=+20V Gate-Source Leakage Current IGSS Reverse VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA VGS=10V, ID=2A Static Drain-Source On-State Resistance RDS(ON) (Note 2) VGS=5V, ID=1A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG Gate to Source Charge QGS VGS=10V, VDS=80V, ID=3.1A Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDS=50V, ID=3.1A VGS=10V, RG=3.3Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note 2) VSD IS=3.1A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 1 10 +100 -100 V µA nA nA 3 150 250 V mΩ mΩ 530 45 35 pF pF pF 95 3.2 3 40 30 150 45 nC nC nC ns ns ns ns 1.3 V 3 of 7 QW-R502-772.E UTT6NP10 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) P-Channel PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=-250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=-80V, VGS=0V Forward VGS=+20V, VGS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VGS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA VGS=-10V, ID=-2A Static Drain-Source On-State Resistance RDS(ON) (Note 2) VGS=-5V, ID=-1A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VGS=-10V, VDS=-80V, ID=-3.2A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDS=-50V, ID=-3.2A VGS=-10V, RG=3.3Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note 2) VSD IS=-3.2A, VGS=0V Notes: 1. Pulse Test: Pulse width limited by Max. junction temperature. 2. N-CH, P-CH are same, mounted on 2oz FR4 board t≦10s. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -100 V -10 µA +100 nA -100 nA -1 -3 155 250 V mΩ mΩ 1400 2240 110 70 pF pF pF 140 7 6 46 51 300 250 nC nC nC ns ns ns ns -1.3 V 4 of 7 QW-R502-772.E UTT6NP10 Power MOSFET TEST CIRCUITS AND WAVEFORMS N-CHANNEL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P-CHANNEL 5 of 7 QW-R502-772.E UTT6NP10 Power MOSFET TYPICAL CHARACTERISTICS N-channel 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 0.5 1 1.5 2.5 2 Gate Threshold Voltage, VTH (V) 3 Drain Current, ID (A) Drain Current, ID (A) 0 30 90 120 150 60 Drain-Source Breakdown Voltage, BVDSS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-772.E UTT6NP10 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Drain Current, -ID (A) Drain Current, -ID (A) Drain Current, -ID (µA) Drain Current, -ID (µA) P-channel UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-772.E