Application Notes

AN10405
Increased circuit efficiency, less required board space and
saved money by replacing power transistors by low VCEsat
(BISS) transistors
Rev. 01.00 — 06 January 2006
Application note
Document information
Info
Content
Keywords
Bipolar transistors, BISS, low VCEsat, PBSS, power transistors
Abstract
This application note provides information on how to make use of a cost
saving opportunity by replacing older medium power and power
transistors by Philips’ low VCEsat (BISS) transistors. A cross reference
table provides a cross reference for leaded and SMD types. Further
spreadsheets show a comparison of the most common parameters
(VCEO, IC, VCEsat and hFE).
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Revision history
Rev
Date
Description
01
20060106
Initial document
Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, please send an email to: [email protected]
<12NC>
Application note
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
2 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
1. Introduction
This application note provides information on how to make use of a cost saving
opportunity by replacing older medium power and power transistors by Philips’ low VCEsat
(BISS) transistors1. A cross reference table provides a cross reference for leaded and
SMD types. Further spreadsheets show a comparison of the most common parameters
(VCEO, IC, VCEsat and hFE).
2. Reduced power dissipation due to low saturation voltage
The low saturation voltage VCEsat, high collector current capability IC(max) and high current
gain hFE make BISS transistors an excellent alternative to older medium power
transistors in SOT54 (TO-92), SOT223 (SC-73) and SOT89 (SC-62) and power
transistors in DPAK, TO-220 and TO-126. Particularly, for switching applications the
transistors’ power dissipation is significantly lower due to a low collector-emitter
saturation voltage as the following example shows:
Table 1:
BISS transistors dissipate less power enabling to select smaller and cheaper
packages
Example
Power transistor
BISS transistor
Type
BD132
PBSS5350S
Package
SOT32 (TO-126)
SOT54 (TO-92)
IC
2A
2A
VCEsat
700 mV
300 mV
PC = VCEsat x IC
1400 mW
600 mW
hFE(min)
20
100
Due to the lower power dissipation transistors with a smaller package can be selected.
The PBSS5350S in SOT54 (TO-92) for example replaces a BD132 in TO-126. Keeping
in mind that for discrete semiconductors package costs are higher than the cost for the
silicon savings can be realized by using small SOT54 BISS transistors. Additionally, the
circuit efficiency increases and less board space is necessary.
Further, BISS transistors present a higher current gain hFE. As a result, less base current
is required to control the transistor which takes load from the driving circuit.
While for switching applications VCEsat is very low, the higher VCE for linear applications
leads to a higher power dissipation. A replacement with BISS transistors is limited to
830 mW for leaded BISS transistors and to 1350 mW for surface mount applications
(2 W for SOT223 transistors on 6 cm² collector mounting pad).
1
More information on low VCEsat (BISS) transistors is given in the following application notes:
AN10116: Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications
AN10393: BISS transistors and MEGA Schottky rectifiers – improved technologies for discrete
semiconductors
<12NC>
Application note
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
3 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Only a few BISS transistor types are necessary to replace numerous power transistors:
• PBSS8110_ / PBSS9110_
1 A / 100 V and
• PBSS4350_ / PBSS5350_
3 A / 50 V replace
- power transistors with 1 – 3 A rated collector current.
• PBSS4540Z / PBSS5540Z
5 A / 40 V and
• PBSS302ND / PBSS302PD
4 A / 40 V replace
- power transistors with 4 – 5 A rated collector current.
Table 19: - Table 24: show the most common parameters of these types for reference.
3. Common replacements
Many popular transistors are included in the cross reference table (Table 2:). Main cross
reference data given in Table 3: – Table 18: are provided to confirm the selection. For
SMD replacements these tables provide up to three alternatives with the same electrical
but different thermal specifications. This enables to use the smallest package possible
depending on the actual power dissipation.
The BISS transistors in Table 2: are selected with focus on reducing the number of types.
This implies that the provided replacement must not necessarily be the optimum solution
with regard to the achievable power dissipation.
<12NC>
Application note
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
4 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
4. General selection process
For transistors not included in the cross reference table the following steps need to be
done by comparing the data sheets:
1. Limiting values, VCEO: BISS transistors must have equal or higher value.
2. Limiting values, IC: BISS transistors must have equal or higher value.
3. Characteristics, VCEsat(max): BISS transistors must have equal or lower value,
pay attention to comparable operating conditions IC and IB. Notes to VCEsat:
- This parameter is mostly important for switching applications
(i.e. not relevant for linear applications).
- The lower the ratio IC/IB the lower the saturation voltage but the higher the
required base current.
- VCEsat values of BISS transistors are far below the values of power transistors.
4. Characteristics, hFE(min): BISS transistors must have equal or higher value,
pay attention to comparable operating conditions IC and VCE. Notes to hFE:
- This parameter is important for linear and switching applications.
- The higher VCE the higher the current gain at a specified current.
- hFE values of BISS transistors are far above the values of power transistors.
5. Calculate resulting power dissipation Ptot to select the most appropriate package.
• Switching applications: Ptot = VCEsat x IC + VBEsat x IB
• Linear applications: Ptot = VCE x IC + VBE x IB
Notes to Ptot:
- For a rough estimation the input power dissipation (VBE(sat) x IB) can be
neglected.
- For linear applications power dissipation may become an issue since VCE is
significantly higher than VCEsat in switching applications.
- For the package selection the mounting conditions must be considered:
SOT54
SOT223*)
SOT89*)
SOT457*)
SOT23*)
*)
0.83 W
1 – 1.35 W
1W
0.6 W
0.48 W
Mounted on 1 cm² collector mounting pad
- For switching applications a high power dissipation capability of the package is
often not necessary anymore since the heat generation is much lower using
BISS transistors due to the very low VCEsat values.
- An even lower power dissipation due to lower VCEsat values can be achieved by
selecting BISS transistors with a lower VCEO value. For example if the
application requires only 20 V breakdown voltage, a 20 V transistor should be
used instead of a 40 V transistor.
For most of the medium power and power transistors the types given in Table 19:–
Table 24: should be sufficient. If not please look for data sheets of transistors starting
with “PBSS” on the Internet or contact your nearest Philips sales office.
<12NC>
Application note
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
5 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
5. Cross reference table for common replacements
Table 2:
Cross reference table for replacing (medium) power by BISS transistors
original type
replacement
SOT54
SOT223
SOT457
SOT23
cross ref. data
BC635
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 3
BC636
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 11
BC637
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 3
BC638
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 11
BC639
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 3
BC640
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 11
BCP51
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 11
BCP52
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 11
BCP53
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 11
BCP54
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 3
BCP55
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 3
BCP56
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 3
BCX51
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 11
BCX52
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 11
BCX53
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 11
BCX54
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 3
BCX55
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 3
BCX56
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 3
BD131
PBSS4350S
PBSS4350Z
PBSS4350D
Table 7
BD132
PBSS5350S
PBSS5350Z
PBSS5350D
Table 15
BD135
PBSS4350S
PBSS4350Z
PBSS4350D
Table 5
BD136
PBSS5350S
PBSS5350Z
PBSS5350D
Table 13
BD137
PBSS4350S
PBSS4350Z
PBSS4350D
Table 5
BD138
PBSS5350S
PBSS5350Z
PBSS5350D
Table 13
BD139
PBSS4350S
PBSS4350Z
PBSS4350D
Table 5
BD140
PBSS5350S
PBSS5350Z
PBSS5350D
Table 13
BD329
PBSS4350S
PBSS4350Z
PBSS4350D
Table 8
BD330
PBSS5350S
PBSS5350Z
PBSS5350D
Table 16
BD433
PBSS4540Z
PBSS302ND
Table 10
BD434
PBSS5540Z
PBSS302PD
Table 18
BD435
PBSS4540Z
PBSS302ND
Table 10
BD436
PBSS5540Z
PBSS302PD
Table 18
KSH200
PBSS4540Z
KSH210
Table 9
PBSS5540Z
Table 17
KSH31
PBSS4350S
PBSS4350Z
PBSS4350D
Table 6
KSH32
PBSS5350S
PBSS5350Z
PBSS5350D
Table 14
PBSS4540Z
PBSS302ND
Table 10
MJD148
<12NC>
Application note
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
6 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
original type
replacement
SOT54
SOT223
SOT457
SOT23
cross ref. data
MJD200
PBSS4540Z
Table 9
MJD210
PBSS5540Z
Table 17
MJD31
PBSS4350S
PBSS4350Z
PBSS4350D
Table 6
MJD32
PBSS5350S
PBSS5350Z
PBSS5350D
Table 14
TIP29
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 4
TIP29A
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 4
TIP29B
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 4
TIP29C
PBSS8110S
PBSS8110Z
PBSS8110D
PBSS8110T
Table 4
TIP30
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 12
TIP30A
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 12
TIP30B
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 12
TIP30C
PBSS9110S
PBSS9110Z
PBSS9110D
PBSS9110T
Table 12
TIP31
PBSS4350S
PBSS4350Z
PBSS4350D
Table 6
TIP32
PBSS5350S
PBSS5350Z
PBSS5350D
Table 14
<12NC>
Application note
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
7 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
6. Basic cross reference data, NPN transistors
Table 3:
original type
leaded
SMD
type
BC635
BC637
BC639
BCP54
BCP55
BCP56
package
SOT54
SOT223
Ptot
830 mW
1000 mW
VCEO
45 / 60 / 80 V
100 V
IC
1A
1A
VCEsat(max)
500 mV
@ IC = 0,5 A, IB = 50 mA
120 mV
@ IC = 0,5 A, IB = 50 mA
hFE(min)
63
@ IC = 0,15 A, VCE = 2 V
150
@ IC = 0,25 A, VCE = 10 V
40
@ IC = 0,5 A, VCE = 2 V
100
*)
BCX54
BCX55
BCX56
SOT89
*)
850 mW
*)
replacement
leaded
SMD
PBSS8110S
PBSS8110D
SOT54
SOT457
830 mW
600 mW
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
PBSS8110T
SOT23
*)
480 mW
*)
@ IC = 0,5 A, VCE = 10 V
2
Table 4:
type
package
original type
leaded
replacement
leaded
SMD
TIP29
TIP29A
TIP29B
TIP29C
PBSS8110S
PBSS8110Z
PBSS8110T
TO-220AB
SOT54
SOT223
SOT23
Ptot
2000 mW
830 mW
VCEO
40 / 60 /
80 / 100 V
100 V
IC
1A
1A
VCEsat(max)
700 mV
@ IC = 1 A, IB = 125 mA
200 mV
@ IC = 1 A, IB = 100 mA
hFE(min)
40
@ IC = 0,2 A, VCE = 4 V
150
@ IC = 0,25 A, VCE = 10 V
15
@ IC = 1 A, VCE = 4 V
80
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
1000 mW
*)
480 mW
*)
@ IC = 1 A, VCE = 10 V
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
8 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Table 5:
original type
leaded
replacement
leaded
SMD
type
BD135
BD137
BD139
PBSS4350S
PBSS4350Z
PBSS4350D
package
SOT32 (TO-126)
SOT54
SOT223
SOT457
Ptot
1250 mW
830 mW
VCEO
45 / 60 / 80 V
50 V
IC
1,5 A
3A
VCEsat(max)
500 mV
@ IC = 0,5 A, IB = 50 mA
90 mV
hFE(min)
25
@ IC = 0,5 A, VCE = 2 V
200
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
1350 mW
*)
600 mW
*)
@ IC = 0,5 A, IB = 50 mA
@ IC = 0,5 A, VCE = 2 V
2
Table 6:
original type
leaded
SMD
replacement
leaded
SMD
PBSS4350S
PBSS4350Z
PBSS4350D
SOT457
type
TIP31
MJD31
KSH31
package
TO-220
TO-252
DPAK
SOT54
SOT223
Ptot
2000 mW
1560 mW
830 mW
1350 mW
VCEO
40 V
50 V
IC
3A
3A
VCEsat(max)
1200 mV
@ IC = 3 A, IB = 375 mA
290 mV
@ IC = 2 A, IB = 200 mA
hFE(min)
25
@ IC = 1 A, VCE = 4 V
200
@ IC = 1 A, VCE = 2 V
10
@ IC = 3 A, VCE = 4 V
100
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
*)
600 mW
*)
@ IC = 2 A, VCE = 2 V
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
9 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Table 7:
original type
leaded
replacement
leaded
SMD
type
BD131
PBSS4350S
PBSS4350Z
PBSS4350D
package
SOT32
(TO-126)
SOT54
SOT223
SOT457
830 mW
1350 mW
Ptot
*)
600 mW
VCEO
45 V
50 V
IC
3A
3A
VCEsat(max)
300 mV
@ IC = 0,5 A, IB = 50 mA
90 mV
@ IC = 0,5 A, IB = 50 mA
700 mV
@ IC = 2 A, IB = 200 mA
290 mV
@ IC = 2 A, IB = 200 mA
40
@ IC = 0,5 A, VCE = 12 V
200
@ IC = 0,5 A, VCE = 2 V
20
@ IC = 2 A, VCE = 1 V
100
@ IC = 2 A, VCE = 2 V
hFE(min)
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
*)
2
Table 8:
original type
leaded
replacement
leaded
SMD
type
BD329
PBSS4350S
PBSS4350Z
PBSS4350D
package
SOT32
(TO-126)
SOT54
SOT223
SOT457
830 mW
1350 mW
Ptot
*)
600 mW
VCEO
20 V
50 V
IC
3A
3A
VCEsat(max)
500 mV
@ IC = 2 A, IB = 200 mA
290 mV
@ IC = 2 A, IB = 200 mA
hFE(min)
85
@ IC = 0,5 A, VCE = 1 V
200
@ IC = 0,5 A, VCE = 2 V
40
@ IC = 2 A, VCE = 1 V
100
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
*)
@ IC = 2 A, VCE = 2 V
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
10 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Table 9:
original type
SMD
replacement
SMD
type
MJD200
KSH200
PBSS4540Z
package
TO-252
DPAK
SOT223
Ptot
1400 mW
1350 mW
VCEO
25 V
40 V
IC
5A
5A
VCEsat(max)
300 mV
@ IC = 0,5 A, IB = 50 mA
90 mV
@ IC = 0,5 A, IB = 50 mA
750 mV
@ IC = 2 A, IB = 200 mA
150 mV
@ IC = 2 A, IB = 200 mA
1800 mV
@ IC = 5 A, IB = 1000 mA
355 mV
@ IC = 5 A, IB = 500 mA
70
@ IC = 0,5 A, VCE = 1 V
300
@ IC = 0,5 A, VCE = 2 V
45
@ IC = 2 A, VCE = 1 V
250
@ IC = 2 A, VCE = 2 V
10
@ IC = 5 A, VCE = 2 V
100
hFE(min)
*)
*)
@ IC = 5 A, VCE = 2 V
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
Table 10:
original type
leaded
type
BD433
BD435
MJD148
package
TO-126
Ptot
replacement
SMD
SMD
PBSS4540Z
PBSS302ND
TO-252
DPAK
SOT223
SOT457
1750 mW
1350 mW
*)
600 mW
*)
VCEO
22 / 32 V
45 V
40 V
40 V
IC
4A
4A
5A
4A
VCEsat(max)
500 mV
@ IC = 2 A, IB = 200 mA
150 mV
180 mV
hFE(min)
85
@ IC = 0,5 A, VCE = 1 V
300
300
@ IC = 0,5 A, VCE = 2 V
50
@ IC = 2 A, VCE = 1 V
250
250
@ IC = 2 A, VCE = 2 V
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
@ IC = 2 A, IB = 200 mA
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
11 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
7. Basic cross reference data, PNP transistors
Table 11:
original type
leaded
SMD
BC636
BC638
BC640
BCP51
BCP52
BCP53
package
SOT54
SOT223
Ptot
830 mW
1000 mW
VCEO
45 / 60 / 80 V
100 V
IC
1A
1A
VCEsat(max)
500 mV
@ IC = 0,5 A, IB = 50 mA
120 mV
@ IC = 0,5 A, IB = 50 mA
hFE(min)
63
@ IC = 0,15 A, VCE = 2 V
150
@ IC = 0,25 A, VCE = 5 V
40
@ IC = 0,5 A, VCE = 2 V
100
type
*)
BCX51
BCX52
BCX53
SOT89
*)
850 mW
*)
replacement
leaded
SMD
PBSS9110S
PBSS9110D
SOT54
SOT457
830 mW
550 mW
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
PBSS9110T
SOT23
*)
480 mW
*)
@ IC = 0,5 A, VCE = 5 V
2
Table 12:
type
package
original type
leaded
replacement
leaded
SMD
TIP30
TIP30A
TIP30B
TIP30C
PBSS9110S
PBSS9110Z
PBSS9110T
TO-220AB
SOT54
SOT223
SOT23
Ptot
2000 mW
830 mW
VCEO
40 / 60 /
80 / 100 V
100 V
IC
1A
VCEsat(max)
700 mV
@ IC = 1 A, IB = 125 mA
320 mV
@ IC = 1 A, IB = 100 mA
hFE(min)
40
@ IC = 0,2 A, VCE = 4 V
150
@ IC = 0,25 A, VCE = 5 V
15
@ IC = 1 A, VCE = 4 V
125
*)
480 mW
*)
1A
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
1000 mW
*)
@ IC = 1 A, VCE = 5 V
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
12 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Table 13:
type
original type
leaded
replacement
leaded
SMD
BD136
BD138
BD140
PBSS5350S
PBSS5350Z
PBSS5350D
SOT457
package
SOT32
(TO-126)
SOT54
SOT223
Ptot
1250 mW
830 mW
1350 mW
VCEO
45 / 60 / 80 V
50 V
IC
1,5 A
3A
VCEsat(max)
500 mV
@ IC = 0,5 A, IB = 50 mA
100 mV
hFE(min)
25
@ IC = 0,5 A, VCE = 2 V
200
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
*)
600 mW
*)
@ IC = 0,5 A, IB = 50 mA
@ IC = 0,5 A, VCE = 2 V
2
Table 14:
original type
leaded
SMD
replacement
leaded
SMD
PBSS5350S
PBSS5350Z
PBSS5350D
SOT457
type
TIP32
MJD32
KSH32
package
TO-220
TO-252
DPAK
SOT54
SOT223
Ptot
2000 mW
1560 mW
830 mW
1350 mW
VCEO
40 V
50 V
IC
3A
3A
VCEsat(max)
1200 mV
@ IC = 3 A, IB = 375 mA
300 mV
@ IC = 2 A, IB = 200 mA
hFE(min)
25
@ IC = 1 A, VCE = 4 V
200
@ IC = 1 A, VCE = 2 V
10
@ IC = 3 A, VCE = 4 V
100
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
*)
600 mW
*)
@ IC = 2 A, VCE = 2 V
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
13 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Table 15:
original type
leaded
replacement
leaded
SMD
type
BD132
PBSS5350S
PBSS5350Z
PBSS5350D
package
SOT32
(TO-126)
SOT54
SOT223
SOT457
830 mW
1350 mW
Ptot
*)
600 mW
VCEO
45 V
50 V
IC
3A
3A
VCEsat(max)
300 mV
@ IC = 0,5 A, IB = 50 mA
100 mV
@ IC = 0,5 A, IB = 50 mA
700 mV
@ IC = 2 A, IB = 200 mA
300 mV
@ IC = 2 A, IB = 200 mA
40
@ IC = 0,5 A, VCE = 12 V
200
@ IC = 0,5 A, VCE = 2 V
20
@ IC = 2 A, VCE = 1 V
100
hFE(min)
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
*)
@ IC = 2 A, VCE = 2 V
2
Table 16:
original type
leaded
replacement
leaded
SMD
type
BD330
PBSS5350S
PBSS5350Z
PBSS5350D
package
SOT32
(TO-126)
SOT54
SOT223
SOT457
830 mW
1350 mW
Ptot
*)
600 mW
VCEO
20 V
50 V
IC
3A
3A
VCEsat(max)
500 mV
@ IC = 2 A, IB = 200 mA
300 mV
@ IC = 2 A, IB = 200 mA
hFE(min)
85
@ IC = 0,5 A, VCE = 1 V
200
@ IC = 0,5 A, VCE = 2 V
40
@ IC = 2 A, VCE = 1 V
100
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
*)
@ IC = 2 A, VCE = 2 V
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
14 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Table 17:
original type
SMD
replacement
SMD
type
MJD210
KSH210
PBSS5540Z
package
TO-252
DPAK
SOT223
Ptot
1400 mW
1350 mW
VCEO
25 V
40 V
IC
5A
VCEsat(max)
300 mV
@ IC = 0,5 A, IB = 50 mA
120 mV
@ IC = 0,5 A, IB = 50 mA
750 mV
@ IC = 2 A, IB = 200 mA
160 mV
@ IC = 2 A, IB = 200 mA
1800 mV
@ IC = 5 A, IB = 1000 mA
375 mV
@ IC = 5 A, IB = 500 mA
70
@ IC = 0,5 A, VCE = 1 V
250
@ IC = 0,5 A, VCE = 2 V
45
@ IC = 2 A, VCE = 1 V
150
@ IC = 2 A, VCE = 2 V
10
@ IC = 5 A, VCE = 2 V
50
hFE(min)
*)
*)
5A
@ IC = 5 A, VCE = 2 V
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
Table 18:
original type
SMD
replacement
SMD
type
BD434
BD436
PBSS5540Z
PBSS302PD
package
TO-126
SOT223
SOT457
Ptot
1350 mW
*)
600 mW
VCEO
22 / 32 V
IC
4A
5A
4A
VCEsat(max)
500 mV
@ IC = 2 A, IB = 200 mA
160 mV
180 mV
@ IC = 2 A, IB = 200 mA
hFE(min)
85
@ IC = 0,5 A, VCE = 1 V
250
200
@ IC = 0,5 A, VCE = 2 V
50
@ IC = 2 A, VCE = 1 V
150
175
@ IC = 2 A, VCE = 2 V
*)
40 V
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
40 V
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
15 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
8. Basic data on the BISS transistors
Table 19: 1 A / 100 V NPN BISS transistors
leaded
SMD
type
PBSS8110S
PBSS8110D
PBSS8110T
package
SOT54
SOT457
SOT23
Ptot
830 mW
600 mW
VCEO
100 V
IC
1A
VCEsat(max)
120 mV
@ IC = 0,5 A, IB = 50 mA
200 mV
@ IC = 1 A, IB = 100 mA
150
@ IC = 0,25 A, VCE = 10 V
100
@ IC = 0,5 A, VCE = 10 V
80
@ IC = 1 A, VCE = 10 V
hFE(min)
*)
*)
480 mW
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
Table 20: 3 A / 50 V NPN BISS transistors
leaded
SMD
type
PBSS4350S
PBSS4350Z
PBSS4350D
package
SOT54
SOT223
SOT457
Ptot
830 mW
1350 mW
VCEO
50 V
IC
3A
VCEsat(max)
90 mV
@ IC = 0,5 A, IB = 50 mA
290 mV
@ IC = 2 A, IB = 200 mA
200
@ IC = 0,5 A, VCE = 2 V
200
@ IC = 1 A, VCE = 2 V
100
@ IC = 2 A, VCE = 2 V
hFE(min)
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
*)
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
16 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Table 21: 4 – 5 A / 40 V NPN BISS transistors
SMD
type
PBSS4540Z
PBSS302ND
package
SOT223
SOT457
*)
Ptot
1350 mW
VCEO
40 V
40 V
IC
5A
4A
VCEsat(max)
90 mV
hFE(min)
600 mW
*)
IC = 0,5 A, IB = 50 mA
150 mV
180 mV
IC = 2 A, IB = 200 mA
355 mV
-
IC = 5 A, IB = 500 mA
300
300
IC = 0,5 A, VCE = 2 V
250
250
IC = 2 A, VCE = 2 V
100
-
IC = 5 A, VCE = 2 V
Table 22: 1 A / 100 V PNP BISS transistors
leaded
SMD
type
PBSS9110S
PBSS9110D
PBSS9110T
package
SOT54
SOT457
SOT23
Ptot
830 mW
VCEO
100 V
IC
1A
VCEsat(max)
120 mV
@ IC = 0,5 A, IB = 50 mA
320 mV
@ IC = 1 A, IB = 100 mA
150
@ IC = 0,25 A, VCE = 5 V
150
@ IC = 0,5 A, VCE = 5 V
125
@ IC = 1 A, VCE = 5 V
hFE(min)
*)
550 mW
480 mW
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
<12NC>
Application note
*)
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
17 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
Table 23: 3 A / 50 V PNP BISS transistors
leaded
SMD
type
PBSS5350S
PBSS5350Z
PBSS5350D
package
SOT54
SOT223
SOT457
Ptot
830 mW
1350 mW
VCEO
50 V
IC
3A
VCEsat(max)
100 mV
@ IC = 0,5 A, IB = 50 mA
mV
@ IC = 2 A, IB = 200 mA
200
@ IC = 0,5 A, VCE = 2 V
200
@ IC = 1 A, VCE = 2 V
100
@ IC = 2 A, VCE = 2 V
hFE(min)
*)
*)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
Table 24: 4 – 5 A / 40 V PNP BISS transistors
SMD
type
PBSS5540Z
PBSS302PD
package
SOT223
SOT457
*)
1350 mW
VCEO
40 V
40 V
IC
5A
4A
VCEsat(max)
120 mV
60 mV
@ IC = 0,5 A, IB = 50 mA
160 mV
180 mV
@ IC = 2 A, IB = 200 mA
375 mV
-
@ IC = 5 A, IB = 500 mA
250
200
@ IC = 0,5 A, VCE = 2 V
150
175
@ IC = 2 A, VCE = 2 V
50
-
@ IC = 5 A, VCE = 2 V
hFE(min)
600 mW
<12NC>
Application note
*)
Ptot
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
18 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
9. Disclaimers
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Application information — Applications that are described herein for any of
these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
10. Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
<12NC>
Application note
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01.00 — 06 January 2006
19 of 20
AN10405
Philips Semiconductors
Replacing power transistors by low VCEsat (BISS) transistors
11. Contents
1.
Introduction .........................................................3
2.
Reduced power dissipation due to low
saturation voltage ...............................................3
3.
Common replacements.......................................4
4.
General selection process..................................5
5.
Cross reference table for common
replacements.......................................................6
6.
Basic cross reference data, NPN transistors....8
7.
Basic cross reference data, PNP transistors ..12
8.
Basic data on the BISS transistors..................16
9.
Disclaimers ........................................................19
10.
Contents.............................................................20
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release:06 January 2006
Document number: <12NC>
Published in The Netherlands
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