Datasheet

AOL1436
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1436 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics. This device is ideally suite
for use as a High side switch in CPU core power
conversion.
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 20V)
RDS(ON) < 8.2mΩ (VGS = 12V)
RDS(ON) < 11.5mΩ (VGS = 10V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
S
Bottom tab
connected to
drain
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
TC=25°C G
B
Current
TC=100°C
ID
C
Pulsed Drain Current
IDM
Continuous Drain
TA=25°C
A
Current
TA=70°C
C
Avalanche Current
Repetitive avalanche energy L=0.3mHC
Power Dissipation
B
TC=25°C
TC=100°C
IDSM
IAR
EAR
PD
TA=25°C
PDSM
TA=70°C
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-CaseD
Power Dissipation
S
G
Units
V
V
±30
50
48
120
15
12
A
A
28
A
118
43
mJ
W
22
2.3
1.4
A
Alpha & Omega Semiconductor, Ltd.
Maximum
25
W
-55 to 175
Symbol
RθJA
RθJC
Typ
20
46
2.5
°C
Max
25
55
3.5
Units
°C/W
°C/W
°C/W
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AOL1436
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
25
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±30V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2
ID(ON)
On state drain current
VGS=12V, V DS=5V
120
TJ=55°C
nA
3.2
4
V
VGS=20V, ID=20A
5
6
A
mΩ
VGS=12V, ID=20A
6.6
8.2
mΩ
8.6
11.5
VGS=10V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,V GS=0V
Maximum Body-Diode Continuous Current
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(12V) Total Gate Charge
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
µA
5
100
TJ=125°C
IS
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
VDS=20V, V GS=0V
IDSS
RDS(ON)
Typ
11
43
S
0.72
1100
VGS=0V, VDS=12.5V, f=1MHz
1
V
50
A
1350
pF
420
pF
200
VGS=0V, VDS=0V, f=1MHz
VGS=10V, V DS=12.5V, ID=20A
VGS=10V, V DS=12.5V, R L=0.68Ω,
RGEN=0.6Ω
mΩ
pF
0.8
1.5
Ω
20
24
nC
17
6.5
nC
6.8
nC
9.5
ns
13.5
ns
11.5
ns
tf
Turn-Off Fall Time
5.4
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
32
Body Diode Reverse Recovery Charge
IF=20A, dI/dt=100A/µs
19
ns
nC
Qrr
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on steady state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev2: June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOL1436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
120
20V
10V
100
60
12V
ID(A)
ID(A)
80
60
VDS=5V
40
VGS=8V
40
125°C
20
25°C
20
0
0
4
0
1
2
3
4
VDS (Volts)
Figure 1: On-Region Characteristics
6
7
8
9
VGS(Volts)
Figure 2: Transfer Characteristics
10.0
1.6
Normalized On-Resistance
VGS=10V
9.0
8.0
RDS(ON) (mΩ)
5
5
7.0
VGS=12V
6.0
5.0
4.0
VGS=20V
3.0
VGS=20V
ID=20A
1.4
1.2
VGS=12V
VGS=10V
1
VGS=10V
VGS=12V
0.8
VGS=20V
2.0
0
5
10
15
20
25
0.6
30
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-25
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
ID=20A
18
1.0E+01
1.0E+00
IS (A)
RDS(ON) (mΩ)
14
TC=100°C
10
TA=25°C
125°C
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
-55 to 175
6
1.0E-04
25°C
1.0E-05
2
8
10
12
14
16
18
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
20
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
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AOL1436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
20
VDS=12.5V
ID=20A
18
16
Capacitance (pF)
VGS (Volts)
14
12
10
8
6
1200
1000
4
Coss
800
600
400
Crss
200
2
0
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
RDS(ON)
limited
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
80
60
T J(Max)=175°C
T C=25°C
0.1
T J(Max)=175°C
T C=25°C
120
100
DC
0.0
0.01
5
Power (W)
100ms
10µs
100µs
1.0
0.1
0
140
100.0
10.0
0
35
1000.0
ID (Amps)
Ciss
1400
40
1
VDS (Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
20
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
100
ZθJC Normalized Transient
Thermal Resistance
10
D=T on/T
T J,PK =T c+PDM.ZθJC.RθJC
RθJC=3.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100°C
TA=25°C
PD
0.1
-55 to 175
T on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOL1436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
T A=25°C
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
80
25°C
60
150°C
40
20
40
30
20
10
0
0.00001
0
0.0001
0.001
0
25
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
60
100
50
80
40
Power (W)
Current rating ID(A)
50
30
20
10
60
40
20
0
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.001
0.00001
0.0001
PD
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=55°C/W
0.01
0.001
0.01
0.1
T on
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOL1436
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
BVDSS
AR
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
I AR
Vdd
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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