Datasheet

AOL1446
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1446 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 7mΩ (VGS = 10V)
RDS(ON) < 11mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8
TM
Top View
D
D
Bottom tab
connected to
drain
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current B
G
TC=100°C
ID
70
200
IDSM
C
C
TC=25°C
Power Dissipation
B
Power Dissipation
A
TA=25°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
A
IAR
30
A
EAR
135
mJ
100
2.1
W
1.3
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
50
PDSM
TA=70°C
Maximum Junction-to-CaseC
A
11
PD
TC=100°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
V
14
TA=70°C
Repetitive avalanche energy L=0.3mH
±20
IDM
TA=25°C
Avalanche Current
Units
V
85
Pulsed Drain Current
Continuous Drain
Current G
Maximum
30
RθJA
RθJC
Typ
19.5
48
1
°C
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
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AOL1446
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Gate resistance
V
µA
100
VGS=10V, ID=20A
Rg
1
Units
5
Gate Threshold Voltage
Crss
0.005
TJ=55°C
VGS(th)
Output Capacitance
Max
30
VDS=24V, VGS=0V
IGSS
Coss
Typ
2.3
nA
3
V
A
5
7
6.7
8.1
8.4
11
mΩ
1
V
85
A
1600
pF
mΩ
60
0.72
1325
VGS=0V, VDS=15V, f=1MHz
535
VGS=0V, VDS=0V, f=1MHz
0.95
S
pF
155
pF
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
26
32
nC
Qg(4.5V) Total Gate Charge
13.5
18
nC
VGS=4.5V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
6.6
tD(on)
Turn-On DelayTime
7.2
10
ns
tr
Turn-On Rise Time
12.5
18
ns
tD(off)
Turn-Off DelayTime
22
33
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
29
36
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
3.2
nC
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Revision 2: June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
50
4.0V
50
40
125°C
ID(A)
ID (A)
40
VDS=5V
30
3.5V
30
25°C
20
20
10
10
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4
4.5
Normalized On-Resistance
1.8
9
VGS=4.5V
8
7
6
5
VGS=10V
4
0
10
20
30
40
50
1.6
ID=20A
VGS=10V
1.4
VGS=4.5V
1.2
1
0.8
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
20
125°C
1.0E+01
16
1.0E+00
IS (A)
ID=20A
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
10
RDS(ON) (mΩ )
2.5
12
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
8
25°C
1.0E-04
1.0E-05
4
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=15V
ID=20A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
1600
Ciss
1200
Coss
800
400
0
Crss
0
0
5
10
15
20
25
30
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
100
10µs
1ms
20
25
30
TJ(Max)=175°C
TA=25°C
300
100µs
10
DC
200
100
TJ(Max)=175°C
TA=25°C
0
0.1
0.1
1
10
100
10
1
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
Zθ Jc Normalized Transient
Thermal Resistance
15
400
RDS(ON)
limited
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
1000
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJC=1.5°C/W
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
80
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
60
40
20
0
90
60
30
0
0.00001
0.0001
0.001
0.01
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
100
80
80
Power (W)
Current rating ID(A)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
60
40
20
60
40
20
0
0
0
25
50
75
100
125
150
175
0.01
TCASE (°C)
Figure 14: Current De-rating (Note B)
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60 °C/W
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AOL1446
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
I AR
Vdd
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Isd
L
+
VDC
Ig
Alpha & Omega Semiconductor, Ltd.
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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