Datasheet

AOL1454
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1454 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
VDS (V) = 40V
ID = 50A (VGS = 10V)
RDS(ON) < 9mΩ (VGS = 10V)
RDS(ON) < 13mΩ (VGS = 4.5V)
ESD Protected
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
G
Bottom tab
connected to
drain
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B
TC=25°C
H
Units
V
±20
V
50
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current A
Maximum
40
ID
48
IDM
100
TA=25°C
A
12
IDSM
TA=70°C
A
10
Avalanche Current C
IAR
30
A
Repetitive avalanche energy L=0.3mH C
EAR
135
mJ
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Maximum Junction-to-Case D
2.1
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.3
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
30
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
60
PD
RθJA
RθJC
Typ
20
50
1.8
°C
Max
25
60
2.5
Units
°C/W
°C/W
°C/W
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AOL1454
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250uA, VGS=0V
Typ
40
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
±100
VGS=10V, ID=20A
2
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=20A
47
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
VGS=4.5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
9.0
10
10.3
1600
VGS=0V, VDS=20V, f=1MHz
3
uA
uA
V
A
7.5
TJ=125°C
Units
V
VDS=40V, VGS=0V
VGS(th)
Coss
Max
13
mΩ
mΩ
S
1
V
50
A
1920
pF
320
pF
100
pF
3.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
nC
Qg(4.5V) Total Gate Charge
10.5
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
Qgs
Gate Source Charge
4.2
nC
Qgd
Gate Drain Charge
4.8
nC
tD(on)
Turn-On DelayTime
6.5
ns
12.5
ns
33
ns
16
ns
ns
nC
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
31
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
33
A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM
are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev1: June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
-40°C
VDS=5V
ID=250uA, VGS=0V
5V
80
25°C
80
VDS=40V, V4V
GS=0V
125°C
60
±100
ID(A)
ID (A)
60
40
40
VGS=3.5V
20
uA
20
VGS=3V
-40°C
125°C
25°C
0
0
0
1
2
3
4
2
5
2.5
3.5
4
4.5
12
5.5
500
150
60
1.6
Normalized On-Resistance
VGS=4.5V
11
5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
RDS(ON) (mΩ )
3
10
9
8
VGS=10V
7
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=5A
1
0.8
6
0
5
10
15
20
25
0.6
30
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
1.0E+01
ID=20A
1.0E+00
25
IS (A)
RDS(ON) (mΩ )
1.0E-01
20
15
125°C
1.0E-02
1.0E-03
125°C
10
1.0E-04
25°C
-40°C
25°C
1.0E-05
5
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=20V
ID=20A
2000
ID=250uA, VGS=0V
VDS=40V, VGS=0V
6
4
Capacitance (pF)
VGS (Volts)
8
Ciss
1600
±100
uA
1200
800
Coss
Crss
2
400
0
0
4
8
12
16
20
0
24
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
500
150
60
1000.0
200
10µs
RDS(ON)
limited
10.0
180
160
10ms
1m
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
120
100
80
60
40
20
0.0
0.01
0.1
1
VDS (Volts)
10
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
TJ(Max)=175°C
Tc=25°C
140
Power (W)
ID (Amps)
100.0
40
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
100
ID=250uA, VGS=0V
VDS=40V, VGS=0V
80
60
TA=150°C
TA=25°C
40
20
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
60
50
±100
40
30
20
10
0
0
0.000001
0.00001
0.0001
0.001
0
25
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
75
100
125
150
175
500
150
60
100
90
50
TA=25°C
80
70
40
Power (W)
Current rating ID(A)
50
TCASE (°C)
Figure 13: Power De-rating (Note B)
60
30
20
60
50
40
30
20
10
10
0
0
0
25
50
75
100
125
150
0.001
175
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
TCASE (°C)
Figure 14: Current De-rating (Note B)
Zθ JA Normalized Transient
Thermal Resistance
uA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
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AOL1454
Gate Charge Test Circuit & Waveform
Vgs
Qg
ID=250uA, VGS=0V
+
10V
VDS=40V,
+ VGS=0V
VDC
-
Qgs
Vds
VDC
Qgd
DUT TA=150°C
TA=25°C
±100
uA
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
500
150
60
+ Vdd
VDC
-
Rg
10%
TA=25°C
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
I AR
Vdd
Id
DUT
Vgs
Vgs
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Single Pulse
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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