Datasheet

AON1606
20V N-Channel MOSFET
General Description
Product Summary
The AON1606 utilize advanced trench MOSFET
technology in small DFN 1.0 x 0.6 package. This device is
ideal for load switch applications.
ID (at VGS=4.5V)
20V
0.7A
VDS
RDS(ON) (at VGS =4.5V)
< 275mΩ
RDS(ON) (at VGS =2.5V)
< 335mΩ
RDS(ON) (at VGS =1.8V)
< 390mΩ
Typical ESD protection
HBM Class 1C
DFN 1.0x0.6
Top View
D
Bottom View
G
S
D
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current E
Pulsed Drain Current
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
Rev 0 : Oct. 2012
Steady-State
t ≤ 10s
Steady-State
A
A
2.8
W
0.55
TJ, TSTG
Symbol
t ≤ 10s
V
0.9
PD
TA=70°C
±8
0.55
IDM
TA=25°C
Units
V
0.7
ID
TA=70°C
C
Maximum
20
RθJA
RθJA
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-55 to 150
Typ
80
110
200
280
°C
Max
100
140
245
340
Units
°C/W
°C/W
°C/W
°C/W
Page 1 of 5
AON1606
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.3
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
2.8
TJ=55°C
VGS=4.5V, ID=0.4A
TJ=125°C
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
µA
5
±10
µA
0.65
1.0
V
225
275
313
380
A
mΩ
VGS=2.5V, ID=0.3A
265
335
mΩ
VGS=1.8V, ID=0.2A
300
390
mΩ
VGS=1.5V, ID=0.1A
355
mΩ
gFS
Forward Transconductance
VDS=5V, ID=0.4A
2
S
VSD
Diode Forward Voltage
IS=0.4A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current E
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
V
A
62.5
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
1.2
-0.7
VGS=4.5V, VDS=10V, ID=0.4A
pF
12.5
pF
9
pF
5.5
Ω
0.85
nC
0.1
nC
Qgd
Gate Drain Charge
0.25
nC
tD(on)
Turn-On DelayTime
2
ns
tr
Turn-On Rise Time
4
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=4.5V, VDS=10V, RL=25Ω,
RGEN=3Ω
18
ns
8
ns
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R θJA is measured with the device mounted on FR-4 minimum pad board, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
D. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
E. The maximum current limited by package.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Oct. 2012
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Page 2 of 5
AON1606
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2.5
4.5V
2.5
2V
VDS=-5V
2
2
1.5V
1.5
ID(A)
ID (A)
1.5
1
1
125°C
0.5
0.5
VGS=1.0V
25°C
0
0
0
1
2
3
4
0
5
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
600
VGS=1.5V
VGS=1.8V
400
300
200
VGS=2.5V
VGS=4.5V
100
Normalized On-Resistance
1.6
500
RDS(ON) (mΩ
Ω)
0.5
VGS=1.8V
ID=0.2A
VGS=2.5V
ID=0.3A
1.4
17
VGS=4.5V
5
ID=0.4A
1.2
2
10
VGS=1.5V
ID=0.1A
1
0.8
0
0
0.2
0
0.4
0.6
0.8
1
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+01
600
ID=0.4A
500
1.0E+00
400
1.0E-01
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
40
300
200
125°C
1.0E-02
1.0E-03
25°C
100
25°C
1.0E-04
0
1.0E-05
0
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Oct. 2012
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON1606
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
100
VDS=10V
ID=0.4A
80
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
60
40
Coss
1
20
0
0
0
0.2
0.4
0.6
0.8
Qg (nC)
Figure 7: Gate-Charge Characteristics
1
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
5
10.0
10µs 10µs
1.0
100µs
RDS(ON)
limited
1ms
10ms
0.1
DC
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
4
Power (W)
-ID (Amps)
Crss
17
5
2
10
3
2
1
0.0
0
0.01
0.1
1
-VDS (Volts)
10
100
0.0001 0.001
0.01
0.1
1
10
0
100
1000
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Ambient (Note B)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note B)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=140°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note B)
Rev 0 : Oct. 2012
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Page 4 of 5
AON1606
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vgs
VDC
td(on)
tr
t d(off)
tf
90%
Vdd
+
DUT
-
Vgs
Rg
toff
ton
Vgs
10%
Vds
Rev 0 : Oct. 2012
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Page 5 of 5