AOS Semiconductor Product Reliability Report AON1606, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AON1606. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON1606 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Details refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond Mold Material Moisture Level AON1606 Standard sub-micron 20V N-Channel MOSFET DFN1.0x0.6 Bare Cu Ag Epoxy Au wire Epoxy resin with silica filler Up to Level 1 2 III. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample Size Number of Failures Reference Standard HTGB Temp = 150°C , Vgs=100% of Vgsmax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 HTRB Temp = 150°C , Vds=80% of Vdsmax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 MSL Precondition 168hr 85°C / 85%RH + 3 cycle reflow@260°C (MSL 1) - 2079 pcs 0 JESD22-A113 HAST 130°C , 85%RH, 33.3 psia, Vds = 80% of Vdsmax 96 hours 693 pcs 0 JESD22-A110 Autoclave 121°C , 29.7psia, RH=100% 96 hours 693 pcs 0 JESD22-A102 Temperature -65°C to 150°C , 250 / 500 693 pcs 0 JESD22-A104 air to air, cycles Cycle Note: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 3.82 MTTF = 29919 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 3.82 9 MTTF = 10 / FIT = 29919 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3