Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N65K
Power MOSFET
4.0A, 650V N-CHANNEL
POWER MOSFET
1

TO-220F
DESCRIPTION
The UTC 4N65K is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristic. This power MOSFET is
usually used in high speed switching applications including
power supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.

FEATURES
SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N65KL-TF3-T
4N65KG-TF3-T
4N65KL-TF1-T
4N65KG-TF1-T
4N65KL-TF2-T
4N65KG-TF2-T
4N65KL-TF3T-T
4N65KG-TF3T-T
4N65KL-TM3-T
4N65KG-TM3-T
4N65KL-TN3-R
4N65KG-TN3-R
4N65KL-T2Q-R
4N65KG-T2Q-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
TO-220F1
1
1
TO-220F2
1
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

1
TO-220F3
1
TO-251
TO-262
1
TO-252
Package
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-252
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
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QW-R502-840.G
4N65K

Power MOSFET
MARKING
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QW-R502-810.G
4N65K

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note2)
IAR
4.4
A
Continuous
ID
4.0
A
Drain Current
16
A
Pulsed (Note2)
IDM
Single Pulsed (Note3)
EAS
50
mJ
Avalanche Energy
10.6
mJ
Repetitive (Note2)
EAR
Peak Diode Recovery dv/dt (Note4)
dv/dt
3.1
V/ns
TO-220F
34
W
TO-220F1/TO-220F2
35
W
Power Dissipation
PD
TO-220F3
TO-251/TO-252
50
W
TO-262
106
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=6.25mH, IAS=4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220F/TO-220F1
TO-220F2/TO-220F3
Junction to Ambient
TO-251/TO-252
TO-262
TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Case
TO-251/TO-252
TO-262
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
UNIT
62.5
°С/W
110
°С/W
3.66
°С/W
3.54
°С/W
2.5
1.18
°С/W
°С/W
θJA
θJC
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4N65K

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0 V, ID = 250μA
650
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ID=250μA, Referenced to 25°C
Forward
IGSS
Reverse
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25 V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V,
Gate-Source Charge
QGS
ID=1.3A, ID=100μA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, VGS=10V, ID=0.5A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4.4A
Reverse Recovery Time
trr
IS=4.4A, VGS =0 V
dIF/dt=100A/µs (Note1)
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
Gate-Source Leakage Current
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MIN TYP MAX UNIT
0.6
V
10
μA
100 nA
-100 nA
V/°С
1.72
4.0
2.5
V
Ω
670
50
5
750
90
11
pF
pF
pF
17
4.9
3.7
44
50
80
45
20
60
100
130
70
nC
nC
nC
ns
ns
ns
ns
4.4
A
17.6
A
1.4
V
ns
µC
2.0
440
2.5
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4N65K

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N65K

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Transient Thermal Response
Curve
Power Dissipation
120
Power Dissipation, PD (W)
1
Thermal Response, θJC (t)

Power MOSFET
0.1
Notes:
1. θJC (t) = 1.18°С/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
0.01
1E-5
1E-4 1E-3 0.01 0.1
1
10
Square Wave Pulse Duration, t1 (sec)
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100
80
60
40
TO-252
TO-220F2
TO-220F
20
0
0 20 40 60 80 100 120140 160
TC (°C)
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4N65K
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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