UNISONIC TECHNOLOGIES CO., LTD 7N20Z Power MOSFET 7A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N20Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. This device can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N20Z is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters. FEATURES * Low Gate Charge: 5.8nC (TYP.) * Low CRSS: 10 pF (TYP.) * RDS(ON) = 0.58Ω @VGS = 10 V * Fast Switching * Improved dv/dt Capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N20ZL-TN3-R 7N20ZG-TN3-R 7N20ZL-TN3-T 7N20ZG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 5 QW-R502-810.A 7N20Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current TC =25°C ID 7 A Pulsed Drain Current (Note 2) IDM 28 A Single Pulsed Avalanche Energy (Note 3) EAS 130 mJ Power Dissipation PD 2.5 W Operating Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L =26mH, IAS =7A, VDD =25V, RG =25Ω Starting TJ =25°C THERMAL DATA PARAMETER SYMBOL RATINGS Junction to Ambient θJA 50 Note: When mounted on the minimum pad size recommended (PCB Mount) UNIT °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250µA Drain-Source Leakage Current IDSS VDS =200V, VGS =0V Gate-Source Leakage Current IGSS VGS =±25V, VDS =0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID =250µA Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =3.5A DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=100V, ID=7A Gate Source Charge QGS (Note 1,2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=50V, ID=7A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS =7A, VGS =0V Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 200 2.0 1 ±10 V µA µA 4.0 0.58 0.69 V Ω 190 60 10 250 75 13 pF pF pF 5.8 1.4 2.5 7 24 13 19 7.5 25 60 35 50 nC nC nC ns ns ns ns 7 A 28 A 1.5 V 2 of 5 QW-R502-810.A 7N20Z Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-810.A 7N20Z Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R502-810.A 7N20Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Drain-Source On-State Resistance Characteristics it 3.5 2.5 2 1.5 1 D S( O N R 3 )L 10 Drain current, ID (A) Drain Current, ID (A) 100 VGS=10V, ID=3.5A im 4 Maximum Safe Operation Area 10µs 1 100µs 1ms 10ms 0.1 100ms 0.5 0 0.01 0 0.8 0.2 0.4 0.6 Drain to Source Voltage, VDS (V) TA=25ºC 0.1 DC 1 10 60 Drain-Source Voltage, VDS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-810.A