UNISONIC TECHNOLOGIES CO., LTD 1NNPP10 Power MOSFET 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 1NNPP10 is a complementary enhancement mode MOSFET H-BRIDGE, it uses UTC advanced technology to provide customers low on resistance, low gate charge and low threshold voltage. The UTC 1NNPP10 is universally applied in DC-AC Inverters and DC Motor control. SOP-8 FEATURES * N-CHANNEL - ID: 1A / VDSS: 100V * P-CHANNEL - ID: -0.9A / VDSS: -100V * High switching speed SYMBOL ORDERING INFORMATION Ordering Number 1NNPP10G-S08-R www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package SOP-8 Packing Tape Reel 1 of 6 QW-R502-780.D 1NNPP10 MARKING PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET 2 of 6 QW-R502-780.D 1NNPP10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) RATINGS UNIT N-CHANNEL P-CHANNEL Gate-Source Voltage VGSS ±20 ±20 V Drain-Source Voltage VDSS 100 -100 V ID 1 -0.9 A Continuous VGS=10V, TA=25°C, t ≤10 sec Drain Current Pulsed VGS=10V, TA=25°C (Note1) IDM 4.3 -3.64 A TA=25°C 0.87 W PD Power Dissipation Derating 6.94 mW/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER SYMBOL THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 144 °C/W Note: Pulse width ≤ 300μs; duty cycle ≤ 2%. The pulse current is limited by the maximum junction temperature. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance(Note 1) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=100V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 100 VDS=VGS, ID=250µA VGS=10V, ID=1.5A VGS=6V, ID=1A 2 DYNAMIC PARAMETERS Input Capacitance (Note 3) CISS VGS=0V, VDS=25V, Output Capacitance (Note 3) COSS f=1.0MHz Reverse Transfer Capacitance (Note 3) CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note 2, 3) tD(ON) Rise Time (Note 2, 3) tR VDD=30V, ID=1A, RG≈6Ω, VGS=10V Turn-OFF Delay Time (Note 2, 3) tD(OFF) Fall-Time (Note 2, 3) tF Total Gate Charge (Note 3) QG VGS=10V, VDS=50V, ID=1A Gate to Source Charge (Note 3) QGS Gate to Drain Charge (Note 3) QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TA=25°C (Note 2) Maximum Body-Diode Pulsed Current ISM TA=25°C (Note 3) Drain-Source Diode Forward Voltage (Note 1) VSD IS=1.5A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.5 +100 -100 V µA nA nA 4 0.7 0.9 V Ω Ω 225 30 17 pF pF pF 25.6 15 55 13.6 20 2 3 ns ns ns ns nC nC nC 1 4.3 0.88 1.00 A A V 3 of 6 QW-R502-780.D 1NNPP10 Power MOSFET ELECTRICAL CHARACTERISTICS(CONT.) P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance(Note 1) SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=-250µA, VGS=0V VDS=-100V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V -100 VDS=VGS, ID=-250µA VGS=-10V, ID=-1A VGS=-6V, ID=-0.5A -1.5 DYNAMIC PARAMETERS Input Capacitance (Note 3) CISS VGS=0V, VDS=-25V, Output Capacitance (Note 3) COSS f=1.0MHz Reverse Transfer Capacitance (Note 3) CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note 2, 3) tD(ON) Rise Time (Note 2, 3) tR VDD=-30V, ID=-1A, RG≈6Ω, VGS=-10V Turn-OFF Delay Time (Note 2, 3) tD(OFF) Fall-Time (Note 2, 3) tF Total Gate Charge (Note 3) QG VGS=-10V,VDS=-50V, Gate to Source Charge (Note 3) QGS ID=-0.6A Gate to Drain Charge (Note 3) QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TA=25°C (Note 2) Maximum Body-Diode Pulsed Current ISM TA=25°C (Note 3) Drain-Source Diode Forward Voltage (Note 1) VSD IS=-1A, VGS=0V Notes: 1. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. For design aid only, not subject to production testing UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -0.5 +100 -100 V µA nA nA -3.5 1 1.45 V Ω Ω 370 32 20 pF pF pF 30 21 150 48 24 1.5 1.8 ns ns ns ns nC nC nC -0.90 -3.64 -0.88 -1.00 A A V 4 of 6 QW-R502-780.D 1NNPP10 Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT QG 12V 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveforms 5 of 6 QW-R502-780.D 1NNPP10 Drain Current, -ID (A) TYPICAL CHARACTERISTICS Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-780.D