UNISONIC TECHNOLOGIES CO., LTD
15N50
Power MOSFET
15A, 500V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC 15N50 is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and DMOS
technology. This technology allows a minimum on-state resistance and
superior switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC 15N50 is generally applied in high efficiency switch mode
power supplies.
TO-220F1
1
TO-220F2
FEATURES
* RDS(ON)<0.35Ω @ VGS=10V
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
15N50L-TF1-T
15N50G-TF1-T
TO-220F1
15N50L-TF2-T
15N50G-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
MARKING INFORMATION
PACKAGE
MARKING
TO-220F1
TO-220F2
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-788.C
15N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified.) (Note 5)
PARAMETER
Drain to Source Voltage
Gate-Source Voltage
RATINGS
UNIT
500
V
±30
V
TC=25°C
15
A
Continuous
ID
Drain Current
TC=100°C
9
A
Pulsed (Note 2)
IDM
60
A
Avalanche Current (Note 2)
IAR
15
A
731
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
17
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
15
V/ns
TO-220F1
48
Power Dissipation (TC=25°C)
W
TO-220F2
52
PD
TO-220F1
0.384
Derate above 25°C
W/°C
TO-220F2
0.416
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=6.5mH, IAS=15A. VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD≤15A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJC
RATINGS
62.5
2.6
2.4
UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
ID=250µA, VGS=0V, TJ=25°C
MIN TYP MAX UNIT
500
∆BVDSS/∆TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
Gate- Source Leakage Current
TEST CONDITIONS
IDSS
Forward
Reverse
IGSS
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0.5
VDS=500V, VGS=0V,
VDS=320V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=320V, VGS=10V, ID=15A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=200V, ID=15A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=15A, VGS=0V
Body Diode Reverse Recovery Time
trr
ISD=15A, VGS=0V, dIF/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%.
2. Essentially Independent of Operating Temperature Typical Characteristics
UNISONIC TECHNOLOGIES CO., LTD
V
V/°C
1
10
+100
-100
µA
µA
nA
nA
4.0
0.35
V
Ω
2300 2600
250 270
26
30
pF
pF
pF
210
35
60
100
150
460
180
nC
nC
nC
ns
ns
ns
ns
2.0
0.3
240
120
170
500
210
15
60
1.4
333
3.24
A
A
V
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
RL
QG
10V
QGS
VGS
QGD
VDS
DUT
1mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
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www.unisonic.com.tw
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
200
150
100
50
200
150
100
50
0
0
0
0.6
1.2 1.8
2.4
3.0 3.8
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (A)
0
120
360
480 600
240
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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