Datasheet

AOD444/AOI444
60V N-Channel MOSFET
General Description
Product Summary
The AOD444/AOI444 combine advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). Those devices are suitable for use
in PWM, load switching and general purpose applications.
VDS
60V
12A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 60mΩ
RDS(ON) (at VGS = 4.5V)
< 85mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
TopView
TopView
Bottom View
TO-251A
IPAK
D
D
D
S
Pulsed Drain Current
Continuous Drain
Current
TC=25°C
G
S
C
TA=25°C
S
Maximum
60
Units
V
±20
V
9
IDM
A
30
4
IDSM
TA=70°C
D
12
ID
TC=100°C
G
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
G
S
G
S
G
D
Bottom View
A
3
Avalanche Current C
IAS, IAR
19
A
Avalanche energy L=0.1mH C
EAS, EAR
18
mJ
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Aug 2009
2.1
Steady-State
Steady-State
RθJA
RθJC
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W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
10
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
20
PD
TC=100°C
-55 to 175
Typ
17.4
50
4
°C
Max
30
60
7.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD444/AOI444
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=48V, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
On state drain current
VGS=10V, VDS=5V
30
100
nA
2.4
3
V
47
60
85
100
VGS=4.5V, ID=6A
67
85
VDS=5V, ID=20A
14
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
µA
5
VDS=0V, VGS= ±20V
RDS(ON)
Crss
V
TJ=55°C
VGS=10V, ID=12A
Output Capacitance
Units
1
Zero Gate Voltage Drain Current
Coss
Max
60
IDSS
IS
Typ
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=12A
A
0.74
mΩ
mΩ
S
1
V
12
A
360
450
540
pF
40
61
80
pF
16
27
40
pF
0.6
1.4
2.0
Ω
7.5
10
nC
3.8
5
nC
1.2
nC
1.9
nC
4.2
ns
VGS=10V, VDS=30V, RL=2.5Ω,
RGEN=3Ω
3.4
ns
16
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
27
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
30
2
ns
35
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Aug 2009
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Page 2 of 6
AOD444/AOI444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
VDS=5V
7V
25
16
6V
5V
12
10V
ID(A)
ID (A)
20
4.5V
15
25°C
8
4V
10
125°C
4
VGS=3.5V
5
0
0
0
1
2
3
4
2
5
3
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2.4
90
2.2
RDS(ON) (mΩ)
Normalized On-Resistance
100
80
VGS=4.5V
70
60
50
VGS=10V
40
5
6
VGS=10V
ID=12A
2
1.8
17
5
2
VGS=4.5V10
1.6
1.4
1.2
ID=6A
1
0.8
30
0
0
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+01
130
ID=12A
1.0E+00
110
40
125°C
1.0E-01
90
IS (A)
RDS(ON) (mΩ)
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
70
125°C
1.0E-02
25°C
1.0E-03
50
1.0E-04
25°C
1.0E-05
30
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Aug 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD444/AOI444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
700
Capacitance (pF)
VGS (Volts)
600
VDS=30V
ID=12A
8
6
4
Ciss
500
400
300
Coss
200
Crss
2
100
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
10µs
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
RDS(ON)
limited
1.0
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
160
10µs
Power (W)
10.0
ID (Amps)
10
30
200
100.0
10
1
TJ(Max)=175°C
TC=25°C
17
5
2
10
120
80
40
1
VDS (Volts)
10
100
0
0.0001
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=7.5°C/W
0.1
PD
Ton
0.01
0.00001
0.1
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
5
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Aug 2009
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Page 4 of 6
AOD444/AOI444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
TA=25°C
TA=100°C
10
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=150°C
TA=125°C
20
15
10
5
0
1
0
1
10
100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
150
175
10000
16
14
TA=25°C
1000
12
10
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
8
6
17
5
2
10
100
10
4
2
1
0.00001
0
0
25
50
75
100
125
150
175
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Aug 2009
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Page 5 of 6
AOD444/AOI444
AOD444/AOI4
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: Aug 2009
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 6 of 6