AOS Semiconductor Product Reliability Report AOI8N25, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOI8N25. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOI8N25 passes AOS quality and reliability requirements. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOI8N25 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. -RoHS Compliant -Halogen Free Details refer to the datasheet. II. Die / Package Information: AOI8N25 Standard sub-micron 250V N channel MOSFET Package Type TO251A Lead Frame Bare Cu Die Attach Soft solder Bonding Al & Au wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOI8N25 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax - 12 lots 2343pcs 0 JESD22A113 168hrs 500 hrs 1000 hrs 2 lots 2 lots 4 lots 539pcs 0 JESD22A108 HTRB Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs (Note A*) 2 lots 2 lots 4 lots 77 pcs / lot 539pcs 0 JESD22A108 HAST 130 +/- 2°c , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°c , 29.7psi, RH=100% 100 hrs (Note A*) 9 lots 77 pcs / lot 495pcs 0 JESD22A110 96 hrs (Note A*) 12 lots 55 pcs / lot 924pcs 0 JESD22A102 (Note A*) 77 pcs / lot -65°c to 150°c , air to air, 250 / 500 cycles 0 JESD22A104 HTGB Pressure Pot Temperature Cycle Lot Attribution 12 lots (Note A*) Total Sample size Number of Failures 924pcs Reference Standard 77 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 4 MTTF = 26450 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOI8N25). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (4x77x168 +4x77x500 +8x77x1000) x258] = 4 9 8 MTTF = 10 / FIT =2.32 x 10 hrs = 26450 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 258 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3