Datasheet

AOK20S60
600V 20A α MOS
TM
General Description
Product Summary
The AOK20S60 has been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
VDS @ Tj,max
700V
IDM
80A
RDS(ON),max
0.199Ω
Qg,typ
20nC
Eoss @ 400V
4.9µJ
Power Transistor
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOK20S60L
D
G
S
D
AOK20S60
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current
TC=25°C
TC=100°C
AOK20S60
600
Units
V
±30
V
20
ID
14
A
Pulsed Drain Current C
IDM
80
Avalanche Current C
IAR
3.4
A
Repetitive avalanche energy C
EAR
23
mJ
188
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
H
Peak diode recovery dv/dt
Junction and Storage Temperature Range
EAS
PD
dv/dt
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev 0: Jan 2012
RθCS
RθJC
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266
W
2.1
100
20
W/ oC
-55 to 150
°C
300
°C
AOK20S60
Units
40
°C/W
0.5
0.47
°C/W
°C/W
V/ns
Page 1 of 6
AOK20S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
600
-
-
ID=250µA, VGS=0V, TJ=150°C
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.8
3.4
4.1
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=10A, TJ=25°C
-
0.18
0.199
Ω
VGS=10V, ID=10A, TJ=150°C
-
0.48
0.53
Ω
IS=10A,VGS=0V, TJ=25°C
-
0.84
-
V
Maximum Body-Diode Continuous Current
-
-
20
A
Maximum Body-Diode Pulsed CurrentC
-
-
80
A
-
1038
-
pF
-
68
-
pF
-
56.6
-
pF
-
176.5
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.1
-
pF
VGS=0V, VDS=0V, f=1MHz
-
9.3
-
Ω
-
19.8
-
nC
-
4.6
-
nC
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=10A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
7.6
-
nC
tD(on)
Turn-On DelayTime
-
27.5
-
ns
tr
Turn-On Rise Time
-
32
-
ns
tD(off)
Turn-Off DelayTime
-
87.5
-
ns
tf
trr
Turn-Off Fall Time
-
30
-
ns
VGS=10V, VDS=400V, ID=10A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=10A,dI/dt=100A/µs,VDS=400V
-
350
-
ns
Irm
IF=10A,dI/dt=100A/µs,VDS=400V
-
27
-
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=400V
-
5.7
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2.5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan 2012
www.aosmd.com
Page 2 of 6
AOK20S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
40
10V
10V
35
25
30
7V
25
6V
7V
6V
ID (A)
ID (A)
20
20
5.5V
15
10
VGS=4.5V
15
5.5V
10
5V
5
5V
5
VGS=4.5V
0
0
0
5
10
15
0
20
5
10
15
20
VDS (Volts)
Figure 2: On-Region [email protected]°C
VDS (Volts)
Figure 1: On-Region [email protected]°C
100
0.5
VDS=20V
0.4
10
-55°C
RDS(ON) (Ω )
ID(A)
125°C
1
VGS=10V
0.3
0.2
25°C
0.1
0.1
0.0
0.01
2
4
6
8
0
10
20
30
40
50
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
VGS(Volts)
Figure 3: Transfer Characteristics
1.2
3
2.5
VGS=10V
ID=10A
BVDSS (Normalized)
Normalized On-Resistance
10
2
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev 0: Jan 2012
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0.8
-100
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 6
AOK20S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
125°C
12
VDS=480V
ID=10A
25°C
1.0E-01
VGS (Volts)
IS (A)
1.0E+00
1.0E-02
9
6
1.0E-03
3
1.0E-04
1.0E-05
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
0
5
10
15
20
25
30
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
10
8
1000
Eoss(uJ)
Capacitance (pF)
Ciss
Coss
100
Eoss
6
4
Crss
10
2
0
1
0
100
200
300
400
500
VDS (Volts)
Figure 9: Capacitance Characteristics
600
0
100
200
300
400
VDS (Volts)
Figure 10: Coss stored Energy
500
600
100
RDS(ON)
limited
ID (Amps)
10
10µs
100µs
1
DC
1ms
10ms
0.1
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOK20S60 (Note F)
Rev 0: Jan 2012
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Page 4 of 6
AOK20S60
200
25
160
20
Current rating ID(A)
EAS(mJ)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
80
15
10
40
5
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Avalanche energy
150
175
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
Zθ JC Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.47°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOK20S60 (Note F)
Rev 0: Jan 2012
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Page 5 of 6
AOK20S60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev 0: Jan 2012
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6